Invention Grant
- Patent Title: Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
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Application No.: US16199974Application Date: 2018-11-26
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Publication No.: US10658810B2Publication Date: 2020-05-19
- Inventor: Alexander Sztein , Melvin McLaurin , Po Shan Hsu , James W. Raring
- Applicant: Soraa Laser Diode, Inc.
- Applicant Address: US CA Goleta
- Assignee: Soraa Laser Diode, Inc.
- Current Assignee: Soraa Laser Diode, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01S5/02
- IPC: H01S5/02 ; H01S5/022 ; H01S5/32 ; H01S5/343

Abstract:
A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.
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