Invention Grant
- Patent Title: Non-volatile memory device and operating method thereof
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Application No.: US16297763Application Date: 2019-03-11
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Publication No.: US10665302B2Publication Date: 2020-05-26
- Inventor: Bong-Soon Lim , Sang-Hyun Joo , Kee-Ho Jung
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electroncis Co., Ltd.
- Current Assignee: Samsung Electroncis Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4a13dd4e
- Main IPC: G11C16/00
- IPC: G11C16/00 ; G11C16/16 ; G11C16/34 ; H01L27/11582 ; G11C16/24 ; G11C16/08

Abstract:
An operating method of a nonvolatile memory device including a page buffer array in which a plurality of page buffers are arranged in a matrix form includes counting fail bits stored in the page buffers included in first columns determined based on an operation mode from among a plurality of columns of the page buffer array, and determining whether or not a program has passed with respect to memory cells to which the page buffer array is connected, based on a count result corresponding to a number of the fail bits and a reference count determined based on the operation mode.
Public/Granted literature
- US20190206497A1 NON-VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF Public/Granted day:2019-07-04
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