Invention Grant
- Patent Title: Complementary metal oxide semiconductor image sensor and method of manufacturing the same
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Application No.: US16105259Application Date: 2018-08-20
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Publication No.: US10665637B2Publication Date: 2020-05-26
- Inventor: Kyungbae Park , Wenxu Xianyu , Bonwon Koo , Takkyun Ro , Changseung Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6851a3e
- Main IPC: H01L27/30
- IPC: H01L27/30 ; H01L27/146 ; H01L51/44

Abstract:
Provided are an image sensor and a method of manufacturing the same. The image sensor may include a plurality of light detection elements arranged to correspond to a plurality of pixel regions, a color filter layer on the plurality of light detection elements and including a plurality of color filters arranged to correspond to the plurality of light detection elements, and a photodiode device portion on the color filter layer. The photodiode device portion may have curved structures. The photodiode device portion may include an organic material-based photodiode layer, a first electrode between the photodiode layer and the color filter layer, and a second electrode on the photodiode layer. The photodiode device portion may have curved convex structures respectively corresponding to the plurality of color filters.
Public/Granted literature
- US20190305049A1 IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-10-03
Information query
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