- 专利标题: Complementary metal oxide semiconductor image sensor and method of manufacturing the same
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申请号: US16105259申请日: 2018-08-20
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公开(公告)号: US10665637B2公开(公告)日: 2020-05-26
- 发明人: Kyungbae Park , Wenxu Xianyu , Bonwon Koo , Takkyun Ro , Changseung Lee
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6851a3e
- 主分类号: H01L27/30
- IPC分类号: H01L27/30 ; H01L27/146 ; H01L51/44
摘要:
Provided are an image sensor and a method of manufacturing the same. The image sensor may include a plurality of light detection elements arranged to correspond to a plurality of pixel regions, a color filter layer on the plurality of light detection elements and including a plurality of color filters arranged to correspond to the plurality of light detection elements, and a photodiode device portion on the color filter layer. The photodiode device portion may have curved structures. The photodiode device portion may include an organic material-based photodiode layer, a first electrode between the photodiode layer and the color filter layer, and a second electrode on the photodiode layer. The photodiode device portion may have curved convex structures respectively corresponding to the plurality of color filters.
公开/授权文献
- US20190305049A1 IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 公开/授权日:2019-10-03
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