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公开(公告)号：US10228603B2
公开(公告)日：2019-03-12
申请号：US14633781
申请日：2015-02-27
发明人： Bonwon Koo , Deukseok Chung , Hyunjoon Kim , Shanghyeun Park , Changsoo Lee , Taewon Jeong
IPC分类号： G02F1/163 , G06F3/041 , G09G3/38 , G02F1/1333 , G02F1/133
摘要： An electro-chromic panel includes a detection layer, and an electro-chromic layer configured to switch an operational mode of a selected area according to a signal provided from the detection layer. A method of operating an electro-chromic panel includes detecting a first signal provided to a detection layer, and switching an operational mode of a first area of an electro-chromic layer according to the first signal provided from the detection layer.
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公开(公告)号：US12063793B2
公开(公告)日：2024-08-13
申请号：US17362075
申请日：2021-06-29
发明人： Kiyeon Yang , Bonwon Koo , Segab Kwon , Chungman Kim , Yongyoung Park , Dongho Ahn , Seunggeun Yu , Changseung Lee
CPC分类号： H10B63/24 , H01L29/24 , H10N70/245 , H10N70/826 , H10N70/8833
摘要： Provided are a chalcogen compound having ovonic threshold switching characteristics, and a switching device, a semiconductor device, and/or a semiconductor apparatus which include the chalcogen compound. The chalcogen compound includes five or more elements and may have stable switching characteristics with a low off-current value (leakage current value). The chalcogen compound includes: selenium (Se) and tellurium (Te); a first element comprising at least one of indium (In), aluminum (Al), strontium (Sr), and calcium (Ca); and a second element including germanium (Ge) and/or tin (Sn), and may further include at least one of arsenic (As), antimony (Sb), and bismuth (Bi).
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公开(公告)号：US20240074210A1
公开(公告)日：2024-02-29
申请号：US18164926
申请日：2023-02-06
发明人： Kiyeon YANG , Bonwon Koo , Hajun Sung , Changseung Lee , Minwoo Choi
CPC分类号： H10B63/24 , H10B63/84 , H10N70/841 , H10N70/8828
摘要： Disclosed are a memory device and a memory apparatus including the memory device. The memory device may include a first electrode, a second electrode spaced apart from the first electrode, an intermediate layer between the first electrode and the second electrode, and an interface layer in contact with the intermediate layer. The intermediate layer and the interface layer each may have ovonic threshold switching (OTS) characteristics. A material of the interface layer may have a threshold voltage shift greater than a threshold voltage shift (A Vth) of the intermediate layer.
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公开(公告)号：US10678359B2
公开(公告)日：2020-06-09
申请号：US16134471
申请日：2018-09-18
发明人： Eunhyoung Cho , Bonwon Koo , Hyunjoon Kim , Haesung Kim , Jungyun Won
摘要： Provided are a pattern structure for preventing a moiré pattern from becoming visible, and a display apparatus using the same. The pattern structure includes a first element pattern including a plurality of first elements arranged regularly at a first pitch; a second element pattern including a plurality of second elements arranged regularly at a second pitch, the second element pattern being provided on the first element pattern; and a filling layer configured to fill gaps among the plurality of second elements, between adjacent ones thereof. A difference between transmittances of the second element and the filling layer is about 5% or less and thus, a moiré pattern occurring due to the overlapping of the first element pattern and the second element pattern may be prevented from becoming visible.
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5.发明授权公开(公告)号：US10665637B2
公开(公告)日：2020-05-26
申请号：US16105259
申请日：2018-08-20
发明人： Kyungbae Park , Wenxu Xianyu , Bonwon Koo , Takkyun Ro , Changseung Lee
IPC分类号： H01L27/30 , H01L27/146 , H01L51/44
摘要： Provided are an image sensor and a method of manufacturing the same. The image sensor may include a plurality of light detection elements arranged to correspond to a plurality of pixel regions, a color filter layer on the plurality of light detection elements and including a plurality of color filters arranged to correspond to the plurality of light detection elements, and a photodiode device portion on the color filter layer. The photodiode device portion may have curved structures. The photodiode device portion may include an organic material-based photodiode layer, a first electrode between the photodiode layer and the color filter layer, and a second electrode on the photodiode layer. The photodiode device portion may have curved convex structures respectively corresponding to the plurality of color filters.
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6.发明授权公开(公告)号：US12101942B2
公开(公告)日：2024-09-24
申请号：US18478776
申请日：2023-09-29
发明人： Wooyoung Yang , Bonwon Koo , Chungman Kim , Kwangmin Park , Hajun Sung , Dongho Ahn , Changseung Lee , Minwoo Choi
CPC分类号： H10B63/24 , G11C13/0004 , H10B61/10 , H10B63/84 , H10N50/01 , H10N50/80 , H10N70/063 , H10N70/231 , H10N70/24 , H10N70/25 , H10N70/8413 , H10N70/8825 , H10N70/8828 , H10N70/8833 , H10N70/8836
摘要： A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).
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公开(公告)号：US20240046986A1
公开(公告)日：2024-02-08
申请号：US18157408
申请日：2023-01-20
发明人： Minwoo CHOI , Young Jae Kang , Bonwon Koo , Yongyoung Park , Hajun Sung , Dongho Ahn , Kiyeon Yang , Wooyoung Yang , Changseung Lee
CPC分类号： G11C13/0069 , G11C13/0004 , H10B63/10 , G11C2213/30 , H10B63/84
摘要： A memory device includes a memory cell including a selection layer and a phase change material layer, and a controller, wherein the selection layer includes a switching material, the phase change material layer includes a phase change material, and the controller is configured to apply a write pulse to the selection layer and the phase change material layer and control a polarity, a peak value, and a shape of the write pulse.
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公开(公告)号：US11818899B2
公开(公告)日：2023-11-14
申请号：US17244212
申请日：2021-04-29
发明人： Wooyoung Yang , Bonwon Koo , Chungman Kim , Kwangmin Park , Hajun Sung , Dongho Ahn , Changseung Lee , Minwoo Choi
CPC分类号： H10B63/24 , G11C13/0004 , H10B61/10 , H10B63/84 , H10N50/01 , H10N50/80 , H10N70/063 , H10N70/231 , H10N70/24 , H10N70/25 , H10N70/8413 , H10N70/8825 , H10N70/8828 , H10N70/8833 , H10N70/8836
摘要： A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).
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9.发明公开公开(公告)号：US20230329007A1
公开(公告)日：2023-10-12
申请号：US18176750
申请日：2023-03-01
发明人： Hajun SUNG , Youngjae Kang , Bonwon Koo , Yongyoung Park , Dongho Ahn , Kiyeon Yang , Wooyoung Yang , Changseung Lee , Minwoo Choi
摘要： A chalcogenide material according to one embodiment includes germanium (Ge); arsenic (As); sulfur (S); selenium (Se), and at least one group III metal selected from indium (In), gallium (Ga), and aluminum (Al), wherein the content of the Ge may be greater than about 10 at % and less than or equal to about 30 at %, the content of the As may be greater than about 30 at % and less than or equal to about 50 at %, the content of Se is greater than about 20 at % and less than or equal to about 60 at %, the content of S is greater than about 0.5 at % and less than or equal to about 10 at %, and the content of the group III metal may be in the range of 0.5 at % to 10 at %.
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