Invention Grant
- Patent Title: Method for processing a semiconductor device and semiconductor device
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Application No.: US15465688Application Date: 2017-03-22
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Publication No.: US10665687B2Publication Date: 2020-05-26
- Inventor: Hans-Joachim Schulze , Andreas Haertl , Francisco Javier Santos Rodriguez , André Rainer Stegner , Daniel Schloegl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Viering, Jentschura & Partner MBB
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/47 ; H01L21/285 ; H01L21/04
Abstract:
A method for processing a semiconductor device in accordance with various embodiments may include: depositing a first metallization material over a semiconductor body; performing a heating process so as to form at least one region in the semiconductor body including a eutectic of the first metallization material and material of the semiconductor body; and depositing a second metallization material over the semiconductor body so as to contact the semiconductor body via the at least one region in the semiconductor body.
Public/Granted literature
- US20170194450A1 METHOD FOR PROCESSING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2017-07-06
Information query
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