Invention Grant
- Patent Title: Gap detection for consecutive write operations of a memory device
-
Application No.: US16051202Application Date: 2018-07-31
-
Publication No.: US10672441B2Publication Date: 2020-06-02
- Inventor: Daniel B. Penney , Liang Chen , David R. Brown
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/22 ; G11C7/10 ; G11C11/4076 ; G11C11/4093 ; G11C8/18 ; G11C8/10 ; G11C11/4096 ; H04L25/03 ; G06F13/18 ; G11C11/4074

Abstract:
Method and devices include a shifter that is configured to receive a write command for a memory device and is configured to produce multiple shifted write commands from the write command. Multiple flip-flops that are configured to receive a subset of the multiple shifted write commands from the shifter. The multiple flip-flops also are configured to output an indicator of whether subsequent write commands of the subset of write commands is asserted when the write command has completed shifting through the shifter as a write start signal.
Public/Granted literature
- US20190259433A1 GAP DETECTION FOR CONSECUTIVE WRITE OPERATIONS OF A MEMORY DEVICE Public/Granted day:2019-08-22
Information query