Invention Grant
- Patent Title: Method of forming semiconductor structure
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Application No.: US15969788Application Date: 2018-05-03
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Publication No.: US10672612B2Publication Date: 2020-06-02
- Inventor: Gang-Yi Lin , Feng-Yi Chang , Ying-Chih Lin , Fu-Che Lee
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3ea0b13
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/311
Abstract:
The present invention provides a method of forming a semiconductor structure including the following steps. Firstly, a target layer is formed on a substrate, and a plurality of mandrels is formed on the target layer. Next, a material layer is formed on the target layer to cover the mandrels. Then, an etching process is performed to partially remove each of the mandrel and the material layer covered on each mandrel, to form a plurality of mask. Finally, the target layer is patterned through the masks, to form a plurality of patterns. Through the present invention, each mask comprises an unetched portion of each mandrel and a spacer portion of the material covered on each mandrel, and a dimension of each of the patterns is larger than a dimension of each of the mandrel.
Public/Granted literature
- US20190311901A1 METHOD OF FORMING SEMICONDUCTOR STRUCTURE Public/Granted day:2019-10-10
Information query
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