Invention Grant
- Patent Title: Semiconductor device structures including stair step structures, and related semiconductor devices
-
Application No.: US15906366Application Date: 2018-02-27
-
Publication No.: US10672657B2Publication Date: 2020-06-02
- Inventor: Matthew Park , Adam L. Olson , Jixin Yu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L23/52 ; H01L21/768 ; H01L21/311 ; H01L21/3213 ; H01L23/522 ; H01L23/532 ; H01L27/11575 ; H01L27/11582 ; H01L27/11548
Abstract:
A method of forming a semiconductor device assembly comprises forming tiers comprising conductive structures and insulating structures in a stacked arrangement over a substrate. Portions of the tiers are selectively removed to form a stair step structure comprising a selected number of steps exhibiting different widths corresponding to variances in projected error associated with forming the steps. Contact structures are formed on the steps of the stair step structure. Semiconductor device structures and semiconductor devices are also described.
Public/Granted literature
- US20180190587A1 SEMICONDUCTOR DEVICE STRUCTURES INCLUDING STAIR STEP STRUCTURES, AND RELATED SEMICONDUCTOR DEVICES Public/Granted day:2018-07-05
Information query
IPC分类:
