An apparatus includes one or more field effect transistors configured as a switch. Each of the one or more field effect transistors comprises one or more source diffusions, one or more drain diffusions, and one or more gate fingers. Each of the one or more gate fingers is disposed between a source diffusion and a drain diffusion. A first electrical connection to the one or more source diffusions is made using one or more source electrodes that extend from a first end for a first length along a long axis of the source diffusions. A second electrical connection to the one or more drain diffusions is made using one or more drain electrodes that extend from a second end for a second length along a long axis of the drain diffusions. The first length of the one or more source electrodes and the second length of the one or more drain electrodes are generally selected to avoid juxtaposition of the one or more source electrodes and the one or more drain electrodes.