Invention Grant
- Patent Title: Bias circuit
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Application No.: US16131682Application Date: 2018-09-14
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Publication No.: US10673388B2Publication Date: 2020-06-02
- Inventor: Mark Pieter Van Der Heijden , Gerben Willem De Jong , Xin Yang
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@51128b0b
- Main IPC: H03F1/30
- IPC: H03F1/30 ; H03F1/22 ; H03F3/343 ; H03F1/20 ; H03F3/19

Abstract:
A bias circuit for a bipolar RF amplifier is described. The bias circuit includes a current source coupled to a bias network. The bias network supplies a base current to the transistors in the amplifier circuit of the bipolar RF amplifier. The bias circuit includes a buffer coupled to the bias network and to the bipolar RF amplifier. The buffer provides additional base current to the amplifier circuit of bipolar RF amplifier and sinks avalanche current generated by the amplifier circuit of the bipolar RF amplifier.
Public/Granted literature
- US20190173432A1 BIAS CIRCUIT Public/Granted day:2019-06-06
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