Invention Grant
- Patent Title: Method of treating substrates using supercritical fluids
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Application No.: US16133789Application Date: 2018-09-18
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Publication No.: US10679843B2Publication Date: 2020-06-09
- Inventor: Ji-Hoon Jeong , Jung-Min Oh , Kun-Tack Lee , Hyo-San Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee IP Law, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6c0f5220
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/67

Abstract:
A method of processing substrates, comprising: loading a substrate into a process chamber; supplying a supercritical fluid, that is a process fluid under a supercritical state, into the process chamber, chemicals separated from the substrate and the supercritical fluid being mixed into a supercritical mixture in the process chamber; and gradually decreasing a chemical concentration of the supercritical mixture by alternately repeating a pressure drop mode and a supplemental mode such that the supercritical mixture partially flows out from the process chamber at the pressure drop mode when an inner pressure of the process chamber reaches a first pressure and the supercritical fluid turbulently flows into the process chamber at the supplemental mode when the inner pressure of the process chamber reaches a second pressure that is smaller than the first pressure and over a supercritical pressure of the process fluid.
Public/Granted literature
- US20190019669A1 METHOD OF TREATING SUBSTRATES USING SUPERCRITICAL FLUIDS Public/Granted day:2019-01-17
Information query
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