Invention Grant
- Patent Title: High density organic interconnect structures
-
Application No.: US16305743Application Date: 2016-06-30
-
Publication No.: US10685850B2Publication Date: 2020-06-16
- Inventor: Sri Chaitra Jyotsna Chavali , Siddharth K. Alur , Lilia May , Amanda E. Schuckman
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwegman Lundberg & Woessner, P.A.
- International Application: PCT/US2016/040481 WO 20160630
- International Announcement: WO2018/004618 WO 20180104
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/498

Abstract:
Generally discussed herein are systems, devices, and methods that include an organic high density interconnect structure and techniques for making the same. According to an example a method can include forming one or more low density buildup layers on a core, conductive interconnect material of the one or more low density buildup layers electrically and mechanically connected to conductive interconnect material of the core, forming one or more high density buildup layers on an exposed low density buildup layer of the one or more low density buildup layers, conductive interconnect material of the high density buildup layers electrically and mechanically connected to the conductive interconnect material of the one or more low density buildup layers, and forming another low density buildup layer on and around an exposed high density buildup layer of the one or more high density buildup layers.
Public/Granted literature
- US20190221447A1 HIGH DENSITY ORGANIC INTERCONNECT STRUCTURES Public/Granted day:2019-07-18
Information query
IPC分类: