Invention Grant
- Patent Title: Self-aligned cuts in an interconnect structure
-
Application No.: US16220565Application Date: 2018-12-14
-
Publication No.: US10685874B1Publication Date: 2020-06-16
- Inventor: Ruilong Xie , Hui Zang , Lei Sun , Lars Liebmann , Daniel Chanemougame , Guillaume Bouche
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L21/02 ; H01L21/311 ; H01L21/3213

Abstract:
Methods for forming a cut between interconnects and structures with cuts between interconnects. A layer is patterned to form first, second, and third features having a substantially parallel alignment with the second feature between the first feature and the third feature. A sacrificial layer is formed that is arranged between the first and second features and between the second and third features. The sacrificial layer is patterned to form a cut between the first and second features from which a portion of the sacrificial layer is fully removed and to form a cavity in a portion of the sacrificial layer between the second and third features. A dielectric layer is formed inside the cut between the first and second features. After depositing the section of the dielectric material and forming the dielectric layer, the sacrificial layer is removed.
Information query
IPC分类: