Invention Grant
- Patent Title: Transistor, semiconductor device, and electronic device
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Application No.: US15794464Application Date: 2017-10-26
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Publication No.: US10685983B2Publication Date: 2020-06-16
- Inventor: Daigo Ito , Yutaka Okazaki , Takahisa Ishiyama
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5331a385
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/115 ; H01L29/786 ; H01L27/11556

Abstract:
To provide a semiconductor device capable of retaining data for a long time. The semiconductor device includes a first transistor, an insulator covering the first transistor, and a second transistor over the insulator. The first transistor includes a first gate electrode, a second gate electrode overlapping with the first gate electrode, and a semiconductor between the first gate electrode and the second gate electrode. The first gate electrode is electrically connected to one of a source and a drain of the second transistor.
Public/Granted literature
- US20180138208A1 TRANSISTOR, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE Public/Granted day:2018-05-17
Information query
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