Invention Grant
- Patent Title: Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS front-end
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Application No.: US16395084Application Date: 2019-04-25
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Publication No.: US10686040B2Publication Date: 2020-06-16
- Inventor: Martin M. Frank , Takashi Ando , Xiao Sun , Jin Ping Han , Vijay Narayanan
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Michael J. Chang, LLC
- Agent Vazken Alexanian
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/12 ; H01L29/06 ; H01L27/085 ; H01L23/52 ; H01L21/8234

Abstract:
Artificial synaptic devices with a HfO2-based ferroelectric layer that can be implemented in the CMOS front-end are provided. In one aspect, a method of forming a FET device is provided. The method includes: forming a shallow STI region in a substrate separating a first active area of the substrate from a second active area of the substrate; forming at least one FeFET on the substrate in the first active area having a ferroelectric material including a HfO2-based material; and forming at least one logic FET alongside the at least one FeFET on the substrate in the second active area, wherein the at least one logic FET has a gate dielectric including the HfO2-based material. A FET device formed by the present techniques is also provided.
Public/Granted literature
- US20190252500A1 Artificial Synapse with Hafnium Oxide-Based Ferroelectric Layer in CMOS Front-End Public/Granted day:2019-08-15
Information query
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