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公开(公告)号:US11948059B2
公开(公告)日:2024-04-02
申请号:US16952314
申请日:2020-11-19
发明人: Xin Zhang , Xiaodong Cui , Jin Ping Han
IPC分类号: G06N3/04 , G06F1/3246 , G06F1/3287 , G06F21/62
CPC分类号: G06N3/04 , G06F1/3246 , G06F1/3287 , G06F21/6209
摘要: A method for power saving and encryption during analysis of media captured by an information capture device using a partitioned neural network includes replicating, by an information capture device, an artificial neural network (ANN) from a computer server to the information capture device. The ANN on the computer server and a replicated ANN, both, include M layers. The method further includes, in response to captured data being input to be processed, partially processing, by the information capture device, the captured data by executing a first k layers using the replicated ANN, wherein only the k layers are selected to execute on the information capture device. The method further includes transmitting, by the information capture device, an output of the k-th layer to the computer server, which partially processes the captured data by executing the remainder of the M layers using the ANN and the output of the k-th layer.
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公开(公告)号:US11195089B2
公开(公告)日:2021-12-07
申请号:US16021824
申请日:2018-06-28
发明人: Kevin K. Chan , Martin M. Frank , Jin Ping Han
摘要: Described herein is a crossbar array that includes a cross-point synaptic device at each of a plurality of crosspoints. The cross-point synaptic device includes a weight storage element comprising a set of nanocrystal dots. Further, the cross-point synaptic device includes at least three terminals for interacting with the weight storage element, wherein a weight is stored in the weight storage element by sending a first electric pulse via a gate terminal from the at least three terminals, the first electric pulse causes the nanocrystal dots to store a corresponding charge, and the weight is erased from the weight storage element by sending a second electric pulse via the gate terminal, the second electric pulse having an opposite polarity of the first electric pulse.
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公开(公告)号:US10708522B2
公开(公告)日:2020-07-07
申请号:US16100249
申请日:2018-08-10
发明人: Xin Zhang , Jin Ping Han , Dennis M. Newns , Xiaodong Cui
摘要: According to one or more embodiments of the present invention, an image processing system includes a cross-point synapse array that includes multiple row wires, multiple column wires, and multiple cross-point devices, a cross-point device at each intersection of the row wires and the column wires. The image processing system further includes an image sensor array that includes multiple pixel unit circuits, each pixel unit circuit is connected to a corresponding row wire of the cross-point synapse array, wherein the pixel unit circuit generates a voltage output based on an input light. The image processing system further includes a pixel unit controller that adjusts an exposure time of the pixel unit circuits based on voltage outputs from the pixel unit circuits respectively.
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公开(公告)号:US10395713B2
公开(公告)日:2019-08-27
申请号:US15859583
申请日:2017-12-31
发明人: Jin Ping Han , Xiao Sun , Teng Yang
IPC分类号: G06N3/06 , G11C11/22 , H03K19/177
摘要: Word lines intersect bit lines at a plurality of cross points where a plurality of single memory transistor synapse cells are located. Each cell includes a memory transistor; a pulse shaping unit coupled to a given one of a plurality of signal lines and a gate of the memory transistor; a logic gate having inputs coupled to a corresponding one of the word lines and a corresponding one of the bit lines, and an output coupled to the pulse shaping unit; and a pass gate arrangement. The latter is coupled to the memory transistor, the corresponding one of the word lines, the corresponding one of the bit lines, and the output of the logic gate. Pulses are applied to the gate of the memory transistor for weight adjustment during update and to interconnect the memory transistor to the corresponding one of the bit lines during inference.
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公开(公告)号:US20240215462A1
公开(公告)日:2024-06-27
申请号:US18146344
申请日:2022-12-23
发明人: Ning Li , Andrew Herbert Simon , Injo Ok , Kangguo Cheng , Timothy Mathew Philip , Kevin W. Brew , Jin Ping Han , Juntao Li , Nicole Saulnier
CPC分类号: H01L45/1253 , H01L27/2436 , H01L45/06 , H01L45/16
摘要: An electrical device includes a first electrode in series with a second electrode. A phase change memory (PCM) is in series with the second electrode. A variable electrical element is in series with the phase change memory.
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公开(公告)号:US11910731B2
公开(公告)日:2024-02-20
申请号:US17172118
申请日:2021-02-10
CPC分类号: H10N70/231 , H10B63/00 , H10N70/023 , H10N70/063 , H10N70/068 , H10N70/8413 , H10N70/8613 , H10N70/8833
摘要: A phase change memory cell for a semiconductor device that includes a heater element on a first conductive layer with a spacer surrounding sides of the heater element. The phase change memory cell includes a first dielectric layer on the conductive layer and on a bottom portion of the spacer surrounding the heater element and a second dielectric layer on the first dielectric layer surrounding a top portion of the heater element. The phase change memory cell includes a phase change material on a top surface of the heater element and on the second dielectric material.
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公开(公告)号:US10686039B2
公开(公告)日:2020-06-16
申请号:US16395024
申请日:2019-04-25
发明人: Martin M. Frank , Takashi Ando , Xiao Sun , Jin Ping Han , Vijay Narayanan
IPC分类号: H01L21/28 , H01L29/12 , H01L29/06 , H01L27/085 , H01L23/52 , H01L27/088 , H01L21/8234
摘要: Artificial synaptic devices with a HfO2-based ferroelectric layer that can be implemented in the CMOS front-end are provided. In one aspect, a method of forming a FET device is provided. The method includes: forming a shallow STI region in a substrate separating a first active area of the substrate from a second active area of the substrate; forming at least one FeFET on the substrate in the first active area having a ferroelectric material including a HfO2-based material; and forming at least one logic FET alongside the at least one FeFET on the substrate in the second active area, wherein the at least one logic FET has a gate dielectric including the HfO2-based material. A FET device formed by the present techniques is also provided.
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公开(公告)号:US20190378555A1
公开(公告)日:2019-12-12
申请号:US16550809
申请日:2019-08-26
发明人: Jin Ping Han , Xiao Sun , Teng Yang
IPC分类号: G11C11/22 , H03K19/177
摘要: Word lines intersect bit lines at a plurality of cross points where a plurality of single memory transistor synapse cells are located. Each cell includes a memory transistor; a pulse shaping unit coupled to a given one of a plurality of signal lines and a gate of the memory transistor; a logic gate having inputs coupled to a corresponding one of the word lines and a corresponding one of the bit lines, and an output coupled to the pulse shaping unit; and a pass gate arrangement. The latter is coupled to the memory transistor, the corresponding one of the word lines, the corresponding one of the bit lines, and the output of the logic gate. Pulses are applied to the gate of the memory transistor for weight adjustment during update and to interconnect the memory transistor to the corresponding one of the bit lines during inference.
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公开(公告)号:US20190096462A1
公开(公告)日:2019-03-28
申请号:US15717023
申请日:2017-09-27
发明人: Jin Ping Han , Xiao Sun , Teng Yang
IPC分类号: G11C11/22 , H03K19/177
CPC分类号: G11C11/223 , G11C11/2255 , G11C11/2257 , G11C11/2259 , G11C11/2275 , G11C11/54 , G11C11/5621 , G11C11/5628 , G11C11/5657 , G11C11/5671 , G11C16/04 , G11C16/08 , G11C16/10 , H03K19/1776
摘要: Word lines intersect bit lines at a plurality of cross points where a plurality of single memory transistor synapse cells are located. Each cell includes a memory transistor; a pulse shaping unit coupled to a given one of a plurality of signal lines and a gate of the memory transistor; a logic gate having inputs coupled to a corresponding one of the word lines and a corresponding one of the bit lines, and an output coupled to the pulse shaping unit; and a pass gate arrangement. The latter is coupled to the memory transistor, the corresponding one of the word lines, the corresponding one of the bit lines, and the output of the logic gate. Pulses are applied to the gate of the memory transistor for weight adjustment during update and to interconnect the memory transistor to the corresponding one of the bit lines during inference.
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公开(公告)号:US11889773B2
公开(公告)日:2024-01-30
申请号:US18172385
申请日:2023-02-22
发明人: Kevin W. Brew , Injo Ok , Jin Ping Han , Timothy Mathew Philip , Matthew Joseph BrightSky , Nicole Saulnier
CPC分类号: H10N70/231 , G11C11/54 , G11C13/0004 , H10B63/24 , H10N70/826 , H10N70/8413 , G06N3/065 , G11C2213/72
摘要: A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material. The first phase change material has a first resistivity, the second phase change material has a second resistivity, and wherein the first resistivity is at least two times the second resistivity.
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