Invention Grant
- Patent Title: Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the same
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Application No.: US15893081Application Date: 2018-02-09
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Publication No.: US10686074B2Publication Date: 2020-06-16
- Inventor: Chun-Hsiung Tsai , Shahaji B. More , Cheng-Yi Peng , Yu-Ming Lin , Kuo-Feng Yu , Ziwei Fang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/167 ; H01L29/45 ; H01L29/165 ; H01L27/088 ; H01L29/66 ; H01L21/3065 ; H01L21/02 ; H01L21/265 ; H01L21/8234 ; H01L29/06 ; H01L21/027 ; H01L21/3105 ; H01L29/36 ; H01L29/161
Abstract:
A FinFET device structure is provided. The FinFET device structure includes a fin structure extended above a substrate and a gate structure formed over a middle portion of the fin structure. The middle portion of the fin structure is wrapped by the gate structure. The FinFET device structure includes a source/drain (S/D) structure adjacent to the gate structure, and the S/D structure includes a doped region at an outer portion of the S/D structure, and the doped region includes gallium (Ga). The FinFET device structure includes a metal silicide layer formed over the doped region of the S/D structure, and the metal silicide layer is in direct contact with the doped region of the S/D structure.
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