- 专利标题： Fin field effect transistor structure with particular gate appearance
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申请号： US16243014申请日： 2019-01-08
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公开(公告)号： US10686079B1公开(公告)日： 2020-06-16
- 发明人: Chih-Yi Wang , Cheng-Pu Chiu , Huang-Ren Wei , Tien-Shan Hsu , Chi-Sheng Tseng , Yao-Jhan Wang
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5048c23e
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L29/49 ; H01L29/417 ; H01L21/3213 ; H01L21/8234
摘要：
A fin field effect transistor structure with particular gate appearance is provided in this disclosure, featuring a fin on a substrate and a gate on the substrate and traversing over the fin, wherein the fin is divided into an upper portion on a top surface of the fin and a lower portion on two sides of the fin, and the lower portion of the gate has protrusions laterally protruding in said first direction at positions abutting to the fin.
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