According to one embodiment, a semiconductor light receiving element is disclosed. The semiconductor light receiving element includes a Si substrate, a Si pn junction, a passivation film, and a compound semiconductor light receiving layer. The Si avalanche multiplication part is provided on the Si substrate. The Si pn junction surrounds the Si avalanche multiplication part, and includes a junction end part at a height different from that of the Si avalanche multiplication part. The passivation film is provided on the junction end part of the Si pn junction. The compound semiconductor light receiving layer is selectively provided inside a region on the Si pn junction.