Invention Grant
- Patent Title: Resistive random access memory device
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Application No.: US16123519Application Date: 2018-09-06
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Publication No.: US10686129B2Publication Date: 2020-06-16
- Inventor: Chun-Chieh Mo , Shih-Chi Kuo
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L45/00 ; H01L27/24

Abstract:
A memory cell includes: a first electrode contact formed as a cylinder shape that extends along a first direction; a resistive material layer comprising a first portion that extends along the first direction and surrounds the first electrode contact; and a second electrode contact coupled to the resistive material layer, wherein the second electrode contact surrounds the first electrode contact and the first portion of the resistive material layer.
Public/Granted literature
- US20190165267A1 RESISTIVE RANDOM ACCESS MEMORY DEVICE Public/Granted day:2019-05-30
Information query
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