- 专利标题： Semiconductor device and method for manufacturing the same
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申请号： US15846657申请日： 2017-12-19
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公开(公告)号： US10692994B2公开(公告)日： 2020-06-23
- 发明人: Yasuharu Hosaka , Takahiro Iguchi , Masami Jintyou , Takashi Hamochi , Junichi Koezuka
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@f723ba2 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@356f1f6a
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/66 ; H01L29/786 ; H01L21/4757 ; H01L21/4763 ; H01L21/385 ; H01L21/02 ; H01L29/49
摘要：
To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.
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