公开(公告)号：US11929412B2

公开(公告)日：2024-03-12

申请号：US17866822

申请日：2022-07-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masami Jintyou ,  Takahiro Iguchi ,  Yukinori Shima ,  Kenichi Okazaki

IPC: H01L27/12 ,  G02F1/1368 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L29/42364 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/517 ,  H01L29/518

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided.
The semiconductor device includes a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a semiconductor layer, and a first conductive layer. The second insulating layer is positioned over the first insulating layer and the island-shaped semiconductor layer is positioned over the second insulating layer. The second insulating layer has an island shape having an end portion outside a region overlapping with the semiconductor layer. The fourth insulating layer covers the second insulating layer, the semiconductor layer, the third insulating layer, and the first conductive layer, is in contact with part of a top surface of the semiconductor layer, and is in contact with the first insulating layer outside the end portion of the second insulating layer. The semiconductor layer contains a metal oxide, the second insulating layer and the third insulating layer contain an oxide, the first insulating layer contains a metal oxide or a nitride, and the fourth insulating layer contains a metal nitride.

公开(公告)号：US11581427B2

公开(公告)日：2023-02-14

申请号：US17254426

申请日：2019-06-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Takahiro Iguchi ,  Yasutaka Nakazawa

IPC: H01L21/00 ,  H01L29/66 ,  H01L21/383 ,  H01L21/4757 ,  H01L29/786 ,  G02F1/1368 ,  H01L21/465 ,  H01L27/12 ,  H01L27/32 ,  H01L29/423

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor layer is formed, a gate insulating layer is formed over the semiconductor layer, a metal oxide layer is formed over the gate insulating layer, and a gate electrode which overlaps with part of the semiconductor layer is formed over the metal oxide layer. Then, a first element is supplied through the metal oxide layer and the gate insulating layer to a region of the semiconductor layer that does not overlap with the gate electrode. Examples of the first element include phosphorus, boron, magnesium, aluminum, and silicon. The metal oxide layer may be processed after the first element is supplied to the semiconductor layer.

公开(公告)号：US11482626B2

公开(公告)日：2022-10-25

申请号：US16982182

申请日：2019-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masami Jintyou ,  Takahiro Iguchi ,  Yukinori Shima

IPC: H01L29/786 ,  H01L27/15 ,  H01L27/32 ,  H01L29/66

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer containing a metal oxide, a first insulating layer, a second insulating layer, a third insulating layer containing a nitride, and a first conductive layer. The first insulating layer includes a projecting first region that overlaps with the semiconductor layer and a second region that does not overlap with the semiconductor layer and is thinner than the first region. The second insulating layer is provided to cover a top surface of the second region, a side surface of the first region, and the semiconductor layer. The first conductive layer is provided over the second insulating layer and a bottom surface of the first conductive layer over the second region includes a portion positioned below a bottom surface of the semiconductor layer.

公开(公告)号：US11271098B2

公开(公告)日：2022-03-08

申请号：US16904836

申请日：2020-06-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Takahiro Iguchi ,  Masami Jintyou ,  Takashi Hamochi ,  Junichi Koezuka

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/4757 ,  H01L21/4763 ,  H01L21/385 ,  H01L21/02 ,  H01L29/49

Abstract: To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.

公开(公告)号：US10367095B2

公开(公告)日：2019-07-30

申请号：US15058832

申请日：2016-03-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Kenichi Okazaki ,  Yasuharu Hosaka ,  Masami Jintyou ,  Takahiro Iguchi ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66

Abstract: To suppress a change in electrical characteristics in a transistor including an oxide semiconductor film. The transistor includes a first gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, a second insulating film, a second gate electrode, and a third insulating film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side, and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film include In, M, and Zn (M is Al, Ga, Y, or Sn). In a region of the second oxide semiconductor film, the number of atoms of In is smaller than that in the first oxide semiconductor film. The second gate electrode includes at least one metal element included in the oxide semiconductor film.

公开(公告)号：US10008609B2

公开(公告)日：2018-06-26

申请号：US15070306

申请日：2016-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junichi Koezuka ,  Kenichi Okazaki ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takahiro Iguchi ,  Naoto Goto ,  Shunpei Yamazaki

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/24 ,  H01L29/49 ,  H01L29/04

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: To suppress a change in electrical characteristics and improve reliability in a transistor including an oxide semiconductor film. Provided is a semiconductor device including a transistor including a first gate electrode, a first insulating film over the first gate electrode, a first oxide semiconductor film over the first insulating film, a source electrode electrically connected to the first oxide semiconductor film, a drain electrode electrically connected to the first oxide semiconductor film, a second insulating film over the first oxide semiconductor film, a second oxide semiconductor film as a second gate electrode over the second insulating film, and a third insulating film over the second oxide semiconductor film. The second insulating film includes an excess oxygen region having a concentration gradient.

公开(公告)号：US12278292B2

公开(公告)日：2025-04-15

申请号：US17949632

申请日：2022-09-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kenichi Okazaki ,  Masami Jintyou ,  Takahiro Iguchi ,  Yukinori Shima

IPC: H01L29/786 ,  H01L27/15 ,  H01L29/66 ,  H10K59/131

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device having stable electrical characteristics is provided. The semiconductor device includes a semiconductor layer containing a metal oxide, a first insulating layer, a second insulating layer, a third insulating layer containing a nitride, and a first conductive layer. The first insulating layer includes a projecting first region that overlaps with the semiconductor layer and a second region that does not overlap with the semiconductor layer and is thinner than the first region. The second insulating layer is provided to cover a top surface of the second region, a side surface of the first region, and the semiconductor layer. The first conductive layer is provided over the second insulating layer and a bottom surface of the first conductive layer over the second region includes a portion positioned below a bottom surface of the semiconductor layer.

公开(公告)号：US11424334B2

公开(公告)日：2022-08-23

申请号：US16758091

申请日：2018-10-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masami Jintyou ,  Takahiro Iguchi ,  Yukinori Shima ,  Kenichi Okazaki

IPC: H01L27/00 ,  H01L29/00 ,  G02F1/1368 ,  H01L29/423 ,  H01L27/12 ,  H01L29/51

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided.
The semiconductor device includes a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a semiconductor layer, and a first conductive layer. The second insulating layer is positioned over the first insulating layer and the island-shaped semiconductor layer is positioned over the second insulating layer. The second insulating layer has an island shape having an end portion outside a region overlapping with the semiconductor layer. The fourth insulating layer covers the second insulating layer, the semiconductor layer, the third insulating layer, and the first conductive layer, is in contact with part of a top surface of the semiconductor layer, and is in contact with the first insulating layer outside the end portion of the second insulating layer. The semiconductor layer contains a metal oxide, the second insulating layer and the third insulating layer contain an oxide, the first insulating layer contains a metal oxide or a nitride, and the fourth insulating layer contains a metal nitride.

公开(公告)号：US10692994B2

公开(公告)日：2020-06-23

申请号：US15846657

申请日：2017-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Takahiro Iguchi ,  Masami Jintyou ,  Takashi Hamochi ,  Junichi Koezuka

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/786 ,  H01L21/4757 ,  H01L21/4763 ,  H01L21/385 ,  H01L21/02 ,  H01L29/49

Abstract: To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.

公开(公告)号：US11954276B2

公开(公告)日：2024-04-09

申请号：US17316768

申请日：2021-05-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Masami Jintyou ,  Yasuharu Hosaka ,  Naoto Goto ,  Takahiro Iguchi ,  Daisuke Kurosaki ,  Junichi Koezuka

IPC: G06F3/041 ,  G06F3/044 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H10K59/40

CPC classification number: G06F3/0412 ,  G06F3/0446 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H10K59/40 ,  G06F2203/04103

Abstract: A touch panel including an oxide semiconductor film having conductivity is provided. The touch panel includes a transistor, a second insulating film, and a touch sensor. The transistor includes a gate electrode; a gate insulating film; a first oxide semiconductor film; a source electrode and a drain electrode; a first insulating film; and a second oxide semiconductor film. The second insulating film is over the second oxide semiconductor film so that the second oxide semiconductor film is positioned between the first insulating film and the second insulating film. The touch sensor includes a first electrode and a second electrode. One of the first and second electrodes includes the second oxide semiconductor film.