Semiconductor device and method for manufacturing the same

    公开(公告)号:US10692994B2

    公开(公告)日:2020-06-23

    申请号:US15846657

    申请日:2017-12-19

    摘要: To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.

    Semiconductor device and method for evaluating semiconductor device
    7.
    发明授权
    Semiconductor device and method for evaluating semiconductor device 有权
    半导体装置及半导体装置的评价方法

    公开(公告)号:US09153649B2

    公开(公告)日:2015-10-06

    申请号:US14091907

    申请日:2013-11-27

    摘要: A semiconductor layer with a low density of trap states is provided. A transistor with stable electrical characteristics is provided. A transistor having high field-effect mobility is provided. A semiconductor device including the transistor is provided. A method for evaluating a semiconductor layer is provided. A method for evaluating a transistor is provided. A method for evaluating a semiconductor device is provided. Provided is, for example, a semiconductor layer with a low defect density which can be used for a channel formation region of a transistor, a transistor including a semiconductor layer with a low defect density in a channel formation region, or a semiconductor device including the transistor.

    摘要翻译: 提供了具有低密度陷阱状态的半导体层。 提供具有稳定电特性的晶体管。 提供具有高场效应迁移率的晶体管。 提供包括晶体管的半导体器件。 提供了一种用于评估半导体层的方法。 提供了一种用于评估晶体管的方法。 提供了一种用于评估半导体器件的方法。 例如,提供了可以用于晶体管的沟道形成区域的具有低缺陷密度的半导体层,在沟道形成区域中包括具有低缺陷密度的半导体层的晶体管,或包括晶体管的半导体器件 晶体管。

    Oxide semiconductor film and semiconductor device
    8.
    发明授权
    Oxide semiconductor film and semiconductor device 有权
    氧化物半导体膜和半导体器件

    公开(公告)号:US08860022B2

    公开(公告)日:2014-10-14

    申请号:US13862716

    申请日:2013-04-15

    CPC分类号: H01L29/7869 H01L27/1225

    摘要: A method for evaluating an oxide semiconductor film, a method for evaluating a transistor including an oxide semiconductor film, a transistor which includes an oxide semiconductor film and has favorable switching characteristics, and an oxide semiconductor film which is applicable to a transistor and enables the transistor to have favorable switching characteristics are provided. A PL spectrum of an oxide semiconductor film obtained by low-temperature PL spectroscopy has a first curve whose local maximum value is found in a range of 1.6 eV or more and 1.8 eV or less and a second curve whose local maximum value is found in a range of 1.7 eV or more and 2.4 eV or less. A value obtained by dividing the area of the second curve by the sum of the area of the first curve and the area of the second curve is 0.1 or more and less than 1.

    摘要翻译: 一种用于评估氧化物半导体膜的方法,包括氧化物半导体膜的晶体管的评估方法,包括氧化物半导体膜并且具有良好的开关特性的晶体管,以及可应用于晶体管并使晶体管能够实现的氧化物半导体膜 具有良好的开关特性。 通过低温PL光谱获得的氧化物半导体膜的PL光谱具有第一曲线,其局部最大值在1.6eV以上至1.8eV以下的范围内,第二曲线的局部最大值位于 范围为1.7eV以上且2.4eV以下。 通过将第二曲线的面积除以第一曲线的面积和第二曲线的面积之和而得到的值为0.1以上且小于1。

    Semiconductor device and method for manufacturing the same
    9.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08809154B2

    公开(公告)日:2014-08-19

    申请号:US13721972

    申请日:2012-12-20

    IPC分类号: H01L21/336

    摘要: A highly reliable semiconductor device in which a transistor including an oxide semiconductor film has stable electric characteristics is manufactured. In the semiconductor device which includes an inverted-staggered transistor having a bottom-gate structure and being provided over a substrate having an insulating surface, at least a first gate insulating film and a second gate insulating film are provided between a gate electrode layer and an oxide semiconductor film, and heat treatment is performed at a temperature of 450° C. or higher, preferably 650° C. or higher, and then the oxide semiconductor film is formed. By the heat treatment at a temperature of 450° C. or higher before the formation of the oxide semiconductor film, diffusion of hydrogen elements into the oxide semiconductor film, which causes degradation or variations in electric characteristics of the transistor, can be reduced, so that the transistor can have stable electric characteristics.

    摘要翻译: 制造其中包含氧化物半导体膜的晶体管具有稳定的电特性的高度可靠的半导体器件。 在包括具有底栅结构的反交错晶体管并且设置在具有绝缘表面的衬底上的半导体器件中,至少第一栅极绝缘膜和第二栅极绝缘膜设置在栅极电极层和第二栅极绝缘膜之间, 氧化物半导体膜,在450℃以上,优选650℃以上的温度进行热处理,然后形成氧化物半导体膜。 通过在形成氧化物半导体膜之前在450℃以上的温度下进行热处理,可以减少导致劣化或者晶体管的电特性的变化的氢元素向氧化物半导体膜的扩散,因此 晶体管可以具有稳定的电气特性。

    Display device and electronic device including the display device

    公开(公告)号:US11531243B2

    公开(公告)日:2022-12-20

    申请号:US17562070

    申请日:2021-12-27

    摘要: The display device includes a first substrate provided with a driver circuit region that is located outside and adjacent to a pixel region and includes at least one second transistor which supplies a signal to the first transistor in each of the pixels in the pixel region, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a first interlayer insulating film including an inorganic insulating material over the first transistor and the second transistor, a second interlayer insulating film including an organic insulating material over the first interlayer insulating film, and a third interlayer insulating film including an inorganic insulating material over the second interlayer insulating film. The third interlayer insulating film is provided in part of an upper region of the pixel region, and has an edge portion on an inner side than the driver circuit region.