Invention Grant
- Patent Title: Integrated 1T1R RRAM memory cell
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Application No.: US16080922Application Date: 2016-04-01
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Publication No.: US10706921B2Publication Date: 2020-07-07
- Inventor: Elijah V. Karpov , Ravi Pillarisetty , Prashant Majhi , Niloy Mukherjee , Uday Shah
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Grossman, Tucker, Perreault & Pfleger, PLLC
- International Application: PCT/US2016/025694 WO 20160401
- International Announcement: WO2017/171866 WO 20171005
- Main IPC: G11C13/00
- IPC: G11C13/00 ; H01L27/24

Abstract:
One embodiment provides an apparatus. The apparatus includes a bipolar junction transistor (BJT) and an integrated resistive element. The BJT includes a base contact, a base region, a collector contact, a collector region and an integrated emitter contact. The integrated resistive element includes a resistive layer and an integrated electrode. The resistive element is positioned between the base region and the integrated emitter contact.
Public/Granted literature
- US20190066779A1 INTEGRATED 1T1R RRAM MEMORY CELL Public/Granted day:2019-02-28
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