Invention Grant
- Patent Title: Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip
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Application No.: US16409090Application Date: 2019-05-10
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Publication No.: US10707395B2Publication Date: 2020-07-07
- Inventor: Anhe He , Suhui Lin , Jiansen Zheng , Kangwei Peng , Xiaoxiong Lin , Chenke Hsu
- Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Xiamen
- Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Xiamen
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3d742959
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/00 ; H01L33/62 ; H01L23/00 ; H01L33/40

Abstract:
A flip-chip LED chip includes: a substrate; a first semiconductor layer; a light emitting layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer and extending downward to the first semiconductor layer; first and second metal layers respectively over portions of the first and second semiconductor layers; an insulating layer covering the first and second metal layers, the second and first semiconductor layers in the local defect region. The insulating layer has opening structures over the first and second metal layers respectively; a eutectic electrode structure over the insulating layer with openings and including first and second eutectic layers from bottom up at a vertical direction, and including first-type and second-type electrode regions at a horizontal direction. The second eutectic layer does not overlap with the first and second metal layers at the vertical direction.
Public/Granted literature
- US20190267528A1 Eutectic Electrode Structure of Flip-chip LED Chip and Flip-chip LED Chip Public/Granted day:2019-08-29
Information query
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