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    Flip-chip light emitting diode and fabrication method
    2.
    发明授权
    Flip-chip light emitting diode and fabrication method 有权

    公开(公告)号：US10205057B2

    公开(公告)日：2019-02-12

    申请号：US15846146

    申请日：2017-12-18

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Anhe He ,  Su-hui Lin ,  Jiansen Zheng ,  Kang-wei Peng ,  Xiaoxiong Lin ,  Chen-ke Hsu

    IPC: H01L33/60 ,  H01L33/38 ,  H01L33/00 ,  H01L33/12 ,  H01L33/46

    Abstract: A flip-chip light-emitting diode structure includes a substrate; an epitaxial layer over the substrate, which includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; a first electrode structure over the first semiconductor layer; a second electrode structure over the second semiconductor layer; wherein, the first electrode structure includes a first electrode body and a first electrode ring; the second electrode structure includes a second electrode body and a second electrode ring; the thickness of the first electrode ring is greater than or equal to that of the first electrode body and the thickness of the second electrode ring is greater than or equal to that of the second electrode body. As barrier structures, the first and the second electrode rings are used for avoiding short circuit during packaging and usage of the light-emitting diode due to overflow of solid crystal conductive materials, thus improving reliability.

    Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip
    4.
    发明授权
    Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip 有权

    公开(公告)号：US10297736B2

    公开(公告)日：2019-05-21

    申请号：US15853845

    申请日：2017-12-24

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Anhe He ,  Suhui Lin ,  Jiansen Zheng ,  Kangwei Peng ,  Xiaoxiong Lin ,  Chenke Hsu

    IPC: H01L29/40 ,  H01L21/00 ,  H01L33/62 ,  H01L33/40 ,  H01L23/00

    Abstract: A Flip-chip LED chip includes: a substrate; a first semiconductor layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer, which extends downward to the first semiconductor layer; a first metal layer over part of the first semiconductor layer; a second metal layer over part of the second semiconductor layer; an insulating layer covering the first metal layer, the second metal layer, the second semiconductor layer and the first semiconductor layer in the local defect region, with opening structures over the first metal layer and the second metal layer respectively; an eutectic electrode structure over the insulating layer, including a first eutectic layer and a second eutectic layer at vertical direction, and a first-type electrode region and a second-type electrode region at horizontal direction. Poor packaging caused by high eutectic void content during eutectic bonding process can therefore be reduced.

    Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip
    5.
    发明授权
    Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip 有权

    公开(公告)号：US10916688B2

    公开(公告)日：2021-02-09

    申请号：US16900538

    申请日：2020-06-12

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Anhe He ,  Suhui Lin ,  Jiansen Zheng ,  Kangwei Peng ,  Xiaoxiong Lin ,  Chenke Hsu

    IPC: H01L29/40 ,  H01L21/00 ,  H01L33/62 ,  H01L23/00 ,  H01L33/40

    Abstract: A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer, a second semiconductor layer; a first metal layer arranged on at least a portion of the first semiconductor layer and in contact with the first semiconductor layer; and an electrode layer arranged over the light emitting structure, and having a first electrode layer and a second electrode layer. The first electrode layer is electrically coupled to the first and second semiconductor layers; the second electrode layer is configured for bonding with a package substrate, and includes a first and second bonding regions; the first bonding region is electrically coupled to the first semiconductor layer; the second bonding region is electrically coupled to the second semiconductor layer; and the first metal layer is not overlapped with the first bonding region of the second bonding region in a vertical direction.

    Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip
    6.
    发明授权
    Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip 有权

    公开(公告)号：US10707395B2

    公开(公告)日：2020-07-07

    申请号：US16409090

    申请日：2019-05-10

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Anhe He ,  Suhui Lin ,  Jiansen Zheng ,  Kangwei Peng ,  Xiaoxiong Lin ,  Chenke Hsu

    IPC: H01L29/40 ,  H01L21/00 ,  H01L33/62 ,  H01L23/00 ,  H01L33/40

    Abstract: A flip-chip LED chip includes: a substrate; a first semiconductor layer; a light emitting layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer and extending downward to the first semiconductor layer; first and second metal layers respectively over portions of the first and second semiconductor layers; an insulating layer covering the first and second metal layers, the second and first semiconductor layers in the local defect region. The insulating layer has opening structures over the first and second metal layers respectively; a eutectic electrode structure over the insulating layer with openings and including first and second eutectic layers from bottom up at a vertical direction, and including first-type and second-type electrode regions at a horizontal direction. The second eutectic layer does not overlap with the first and second metal layers at the vertical direction.

    High-voltage light emitting diode and fabrication method thereof
    7.
    发明授权
    High-voltage light emitting diode and fabrication method thereof 有权

    公开(公告)号：US10242958B2

    公开(公告)日：2019-03-26

    申请号：US15810076

    申请日：2017-11-12

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Gaolin Zheng ,  Ling-yuan Hong ,  Xiaoxiong Lin ,  Feng Wang ,  Su-hui Lin ,  Chia-hung Chang

    IPC: H01L21/00 ,  H01L27/00 ,  H01L33/00 ,  H01L23/60 ,  H01L27/15 ,  H01L33/38 ,  H01L33/62 ,  H01L33/64 ,  H01L33/44

    Abstract: A fabrication method of a high-voltage light-emitting diode includes the steps of providing a substrate, and forming a light-emitting epitaxial laminated layer on the substrate; patterning the light-emitting epitaxial laminated layer and fabricating a channel that exposes the substrate surface so as to divide the light-emitting epitaxial laminated layer into a plurality of light-emitting diode units, and the light-emitting diode units at least constitute two rows; fabricating an electrode interconnection line crossing the channel, wherein, two adjacent light-emitting diode units are connected by the electrode interconnection line; fabricating an electrode bonding pad over the outmost light-emitting diode unit of the high-voltage light-emitting diode; and fabricating an insulating protective layer opening at the channel where the potential difference of any two adjacent light-emitting diodes is ≥3 times of the forward voltage of a single light-emitting diode to avoid breakdown of the light-emitting epitaxial laminated layer.

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