中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

12 records (took 0.01 seconds)

    GaN-based LED
    1.
    发明授权
    GaN-based LED 有权
    GaN基LED

    公开(公告)号：US09190395B2

    公开(公告)日：2015-11-17

    申请号：US14536324

    申请日：2014-11-07

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Jiansen Zheng ,  Suhui Lin ,  Kangwei Peng ,  Lingyuan Hong ,  Anhe He

    IPC: H01L25/13 ,  H01L33/10 ,  H01L33/40 ,  H01L33/60 ,  H01L33/14 ,  H01L33/32

    CPC classification number: H01L25/13 ,  H01L33/10 ,  H01L33/14 ,  H01L33/32 ,  H01L33/405 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A GaN-based LED includes a substrate; an epitaxial layer over the substrate; a current spreading layer over a P-type layer; and a P electrode over the current spreading layer. The epitaxial layer includes the P-type layer, a light-emitting area, and an N-type layer. An annular reflecting layer and a metal reflecting layer are formed between the P electrode and the epitaxial layer. The geometric center vertically corresponds to the P electrode; the annular reflecting layer is formed between the current spreading layer and the P-type layer; the metal reflecting layer is formed between the current spreading layer and the P electrode; and a preset distance is arranged between the annular reflecting layer and the metal reflecting layer. The annular reflecting layer and the metal reflecting layer reduce light absorption of the P electrode and improve light extraction efficiency.

    Abstract translation: GaN基LED包括基板; 衬底上的外延层; 在P型层上的电流扩散层; 以及在电流扩展层上的P电极。 外延层包括P型层，发光区域和N型层。 在P电极和外延层之间形成环形反射层和金属反射层。 几何中心垂直对应于P电极; 环形反射层形成在电流扩散层和P型层之间; 金属反射层形成在电流扩散层和P电极之间; 并且在环形反射层和金属反射层之间设置预设距离。 环形反射层和金属反射层减少了P电极的光吸收，提高了光提取效率。

    Light emitting diode device
    3.
    发明授权
    Light emitting diode device 有权

    公开(公告)号：US11637223B2

    公开(公告)日：2023-04-25

    申请号：US17064250

    申请日：2020-10-06

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Xiaoliang Liu ,  Anhe He ,  Kang-wei Peng ,  Su-hui Lin ,  Ling-yuan Hong ,  Chia-hung Chang

    IPC: H01L33/38 ,  H01L33/40 ,  H01L33/46

    Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

    Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip
    4.
    发明授权
    Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip 有权

    公开(公告)号：US10297736B2

    公开(公告)日：2019-05-21

    申请号：US15853845

    申请日：2017-12-24

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Anhe He ,  Suhui Lin ,  Jiansen Zheng ,  Kangwei Peng ,  Xiaoxiong Lin ,  Chenke Hsu

    IPC: H01L29/40 ,  H01L21/00 ,  H01L33/62 ,  H01L33/40 ,  H01L23/00

    Abstract: A Flip-chip LED chip includes: a substrate; a first semiconductor layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer, which extends downward to the first semiconductor layer; a first metal layer over part of the first semiconductor layer; a second metal layer over part of the second semiconductor layer; an insulating layer covering the first metal layer, the second metal layer, the second semiconductor layer and the first semiconductor layer in the local defect region, with opening structures over the first metal layer and the second metal layer respectively; an eutectic electrode structure over the insulating layer, including a first eutectic layer and a second eutectic layer at vertical direction, and a first-type electrode region and a second-type electrode region at horizontal direction. Poor packaging caused by high eutectic void content during eutectic bonding process can therefore be reduced.

    Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip
    6.
    发明授权
    Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip 有权

    公开(公告)号：US10916688B2

    公开(公告)日：2021-02-09

    申请号：US16900538

    申请日：2020-06-12

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Anhe He ,  Suhui Lin ,  Jiansen Zheng ,  Kangwei Peng ,  Xiaoxiong Lin ,  Chenke Hsu

    IPC: H01L29/40 ,  H01L21/00 ,  H01L33/62 ,  H01L23/00 ,  H01L33/40

    Abstract: A light emitting diode includes: a light emitting structure including a first semiconductor layer, a light emitting layer, a second semiconductor layer; a first metal layer arranged on at least a portion of the first semiconductor layer and in contact with the first semiconductor layer; and an electrode layer arranged over the light emitting structure, and having a first electrode layer and a second electrode layer. The first electrode layer is electrically coupled to the first and second semiconductor layers; the second electrode layer is configured for bonding with a package substrate, and includes a first and second bonding regions; the first bonding region is electrically coupled to the first semiconductor layer; the second bonding region is electrically coupled to the second semiconductor layer; and the first metal layer is not overlapped with the first bonding region of the second bonding region in a vertical direction.

    Light-emitting diode
    7.
    发明授权
    Light-emitting diode 有权

    公开(公告)号：US10825957B1

    公开(公告)日：2020-11-03

    申请号：US16887877

    申请日：2020-05-29

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Gaolin Zheng ,  Hou-Jun Wu ,  Anhe He ,  Shiwei Liu ,  Kang-Wei Peng ,  Su-Hui Lin ,  Chia-Hung Chang

    IPC: H01L33/38 ,  H01L33/46

    Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer and including a plurality of first sub-electrodes, wherein the plurality of first sub-electrodes are divided into one or more groups, and any two adjacent first sub-electrodes in the same group have a same projection distance; a second electrode disposed over and electrically coupled to the second semiconductor layer; a third electrode coupled to the plurality of first sub-electrodes and including one or more third sub-electrodes, wherein one of the third sub-electrodes corresponds to one of said one or more groups of the first sub-electrodes and connects first sub-electrodes in the group; and a fourth electrode coupled to the second electrode.

    Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip
    8.
    发明授权
    Eutectic electrode structure of flip-chip LED chip and flip-chip LED chip 有权

    公开(公告)号：US10707395B2

    公开(公告)日：2020-07-07

    申请号：US16409090

    申请日：2019-05-10

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Anhe He ,  Suhui Lin ,  Jiansen Zheng ,  Kangwei Peng ,  Xiaoxiong Lin ,  Chenke Hsu

    IPC: H01L29/40 ,  H01L21/00 ,  H01L33/62 ,  H01L23/00 ,  H01L33/40

    Abstract: A flip-chip LED chip includes: a substrate; a first semiconductor layer; a light emitting layer; a second semiconductor layer; a local defect region over part of the second semiconductor layer and extending downward to the first semiconductor layer; first and second metal layers respectively over portions of the first and second semiconductor layers; an insulating layer covering the first and second metal layers, the second and first semiconductor layers in the local defect region. The insulating layer has opening structures over the first and second metal layers respectively; a eutectic electrode structure over the insulating layer with openings and including first and second eutectic layers from bottom up at a vertical direction, and including first-type and second-type electrode regions at a horizontal direction. The second eutectic layer does not overlap with the first and second metal layers at the vertical direction.

    Light-emitting diode
    10.
    发明授权
    Light-emitting diode 有权

    公开(公告)号：US10707380B2

    公开(公告)日：2020-07-07

    申请号：US16147763

    申请日：2018-09-30

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Gaolin Zheng ,  Hou-Jun Wu ,  Anhe He ,  Shiwei Liu ,  Kang-Wei Peng ,  Su-Hui Lin ,  Chia-Hung Chang

    IPC: H01L33/38 ,  H01L33/46

    Abstract: A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.

Patent Agency Ranking