- 专利标题： Semiconductor structure and method for manufacturing the same
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申请号： US15981133申请日： 2018-05-16
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公开(公告)号： US10714433B2公开(公告)日： 2020-07-14
- 发明人: Pu-Fang Chen , Shi-Chieh Lin , Victor Y. Lu
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： WPAT, P.C., Intellectual Property Attorneys
- 代理商 Anthony King
- 主分类号： H01L23/12
- IPC分类号： H01L23/12 ; H01L23/00 ; H01L23/544 ; H01L21/48 ; H01L21/56 ; H01L23/498 ; H01L23/31
摘要：
A method of manufacturing a semiconductor structure includes the following operations. A wafer with an orientation mark at a first crystal orientation represented by a family of Miller indices comprising is provided, wherein i2+ j2+ k2=2. A first chip and a second chip are connected to a first surface of the wafer. A first edge of the first chip and a second edge of the second chip are adjacent to each other. A boundary extending in a direction between the first edge and the second edge is formed. The direction is not parallel to the first crystal orientation.
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