Invention Grant
- Patent Title: Dual sided fan-out package having low warpage across all temperatures
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Application No.: US16379078Application Date: 2019-04-09
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Publication No.: US10714456B2Publication Date: 2020-07-14
- Inventor: Chan H. Yoo , Mark E. Tuttle
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L21/56 ; H01L25/00 ; H01L21/683 ; H01L23/00 ; H01L23/31

Abstract:
Semiconductor devices including a dual-sided redistribution structure and having low-warpage across all temperatures and associated systems and methods are disclosed herein. In one embodiment, a semiconductor device includes a first semiconductor die electrically coupled to a first side of a redistribution structure and a second semiconductor die electrically coupled to a second side of the redistribution structure opposite the first side. The semiconductor device also includes a first molded material on the first side, a second molded material on the second side, and conductive columns electrically coupled to the first side and extending through the first molded material. The first and second molded materials can have the same volume and/or coefficients of thermal expansion to inhibit warpage of the semiconductor device.
Public/Granted literature
- US20190237438A1 DUAL SIDED FAN-OUT PACKAGE HAVING LOW WARPAGE ACROSS ALL TEMPERATURES Public/Granted day:2019-08-01
Information query
IPC分类: