- Patent Title: FINFET having a gate structure in a trench feature in a bent fin
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Application No.: US15678206Application Date: 2017-08-16
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Publication No.: US10714616B2Publication Date: 2020-07-14
- Inventor: Brent A. Anderson , Andres Bryant , Edward J. Nowak
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Calderon Safran & Cole, P.C.
- Agent Michael LeStrange; Andrew M. Calderon
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8238 ; H01L27/12 ; H01L29/10 ; H01L29/66 ; H01L21/3115 ; H01L21/762
Abstract:
A semiconductor device including semiconductor material having a bend and a trench feature formed at the bend, and a gate structure at least partially disposed in the trench feature. A method of fabricating a semiconductor structure including forming a semiconductor material with a trench feature over a layer, forming a gate structure at least partially in the trench feature, and bending the semiconductor material such that stress is induced in the semiconductor material in an inversion channel region of the gate structure.
Public/Granted literature
- US20180012988A1 DUAL STRESS DEVICE AND METHOD Public/Granted day:2018-01-11
Information query
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