- 专利标题: Skyrmion stack memory device
-
申请号: US16273777申请日: 2019-02-12
-
公开(公告)号: US10720572B1公开(公告)日: 2020-07-21
- 发明人: Michael M. Fitelson , Thomas F. Ambrose , Nicholas D. Rizzo
- 申请人: Michael M. Fitelson , Thomas F. Ambrose , Nicholas D. Rizzo
- 申请人地址: US VA Falls Church
- 专利权人: NORTHROP GRUMMAN SYSTEMS CORPORATION
- 当前专利权人: NORTHROP GRUMMAN SYSTEMS CORPORATION
- 当前专利权人地址: US VA Falls Church
- 代理机构: Tarolli, Sundheim, Covell & Tummino LLP
- 主分类号: H01L43/08
- IPC分类号: H01L43/08 ; H01L43/02 ; H01L43/10
摘要:
A memory device includes a memory stack formed on a substrate to program skyrmions within at least one layer of the stack. The skyrmions represent logic states of the memory device. The memory stack further includes a top and bottom electrode to receive electrical current from an external source and to provide the electrical current to the memory stack. A free layer stores a logic state of the skyrmions in response to the electrical current. A Dzyaloshinskii-Moriya (DM) Interaction (DMI) layer in contact with the free layer induces skyrmions in the free layer. A tunnel barrier is interactive with the DMI layer to facilitate detection of the logic state of the skyrmions in response to a read current. At least one fixed magnetic (FM) layer is positioned within the memory stack to facilitate programming of the skyrmions within the free layer in response to the electrical current.
公开/授权文献
- US20200259074A1 SKYRMION STACK MEMORY DEVICE 公开/授权日:2020-08-13