Invention Grant
- Patent Title: Scattering parameter calibration to a semiconductor layer
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Application No.: US15352233Application Date: 2016-11-15
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Publication No.: US10725138B2Publication Date: 2020-07-28
- Inventor: Christoph Wagner , Oliver Frank , Jochen Schrattenecker , Harald Kainmueller
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Harrity & Harrity, LLP
- Main IPC: G01R35/00
- IPC: G01R35/00 ; G01R31/28 ; G01R27/28 ; G01R27/02 ; G01R27/26 ; G01R31/319 ; H01L23/66 ; G01R27/32

Abstract:
A compound may include a set of integrated circuits. An integrated circuit, of the set of integrated circuits, may include calibration standards integrated at a silicon layer of the integrated circuit. The integrated circuit may be included in a package, and a calibration standard, of the calibration standards, may be available to at least one port of a set of ports of the integrated circuit.
Public/Granted literature
- US20170168132A1 SCATTERING PARAMETER CALIBRATION TO A SEMICONDUCTOR LAYER Public/Granted day:2017-06-15
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