- Patent Title: Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
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Application No.: US15897578Application Date: 2018-02-15
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Publication No.: US10731249B2Publication Date: 2020-08-04
- Inventor: Timo Hatanpää , Katja Väyrynen , Mikko Ritala , Markku Leskelä
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer, L.L.P.
- Main IPC: C23C16/455
- IPC: C23C16/455 ; H01L21/285 ; C23C16/40 ; H01L23/532 ; H01L21/768

Abstract:
A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.
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