公开(公告)号：US12106965B2

公开(公告)日：2024-10-01

申请号：US17870931

申请日：2022-07-22

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/18 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/28556 ,  C23C16/045 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76873 ,  H01L21/76879

Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.

公开(公告)号：US10741403B2

公开(公告)日：2020-08-11

申请号：US16674894

申请日：2019-11-05

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/04 ,  C23C16/18 ,  H01L21/768

Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.

公开(公告)号：US10731249B2

公开(公告)日：2020-08-04

申请号：US15897578

申请日：2018-02-15

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/40 ,  H01L23/532 ,  H01L21/768

Abstract: A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

公开(公告)号：US11952658B2

公开(公告)日：2024-04-09

申请号：US17971684

申请日：2022-10-24

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/08 ,  C23C16/18 ,  C23C16/455

CPC classification number: C23C16/18 ,  C23C16/08 ,  C23C16/45531 ,  C23C16/45546 ,  C23C16/45553

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

公开(公告)号：US20230067660A1

公开(公告)日：2023-03-02

申请号：US17971684

申请日：2022-10-24

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Timo Hatanpää ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/18 ,  C23C16/08 ,  C23C16/455

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

公开(公告)号：US20200340113A1

公开(公告)日：2020-10-29

申请号：US16927509

申请日：2020-07-13

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  H01L21/285 ,  C23C16/40 ,  H01L23/532 ,  H01L21/768

Abstract: A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.

公开(公告)号：US20220411931A1

公开(公告)日：2022-12-29

申请号：US17866706

申请日：2022-07-18

Applicant: ASM IP Holding B.V.

Inventor： Timo Hatanpää ,  Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/14

Abstract: Methods of forming a transition metal containing film on a substrate by a cyclical deposition process are disclosed. The methods may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. The deposition methods may also include forming a transition metal containing film with an electrical resistivity of less than 50 μΩ-cm at a film thickness of less than 50 nanometers.

公开(公告)号：US20220389583A1

公开(公告)日：2022-12-08

申请号：US17891851

申请日：2022-08-19

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Timo Hatanpää ,  Anton Vihervaara ,  Mikko Ritala ,  Markku Leskelä

IPC: C23C16/455 ,  C23C16/08 ,  C23C16/18

Abstract: A method of depositing a metal-containing material is disclosed. The method can include use of cyclic deposition techniques, such as cyclic chemical vapor deposition and atomic layer deposition. The metal-containing material can include intermetallic compounds. A structure including the metal-containing material and a system for forming the material are also disclosed.

公开(公告)号：US20220367195A1

公开(公告)日：2022-11-17

申请号：US17870931

申请日：2022-07-22

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/04 ,  C23C16/18 ,  H01L21/768

Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.

公开(公告)号：US11410851B2

公开(公告)日：2022-08-09

申请号：US16936950

申请日：2020-07-23

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/04 ,  C23C16/18 ,  H01L21/768

Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.