- 专利标题： Semiconductor device and method of fabricating the same
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申请号： US15909371申请日： 2018-03-01
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公开(公告)号： US10734402B2公开(公告)日： 2020-08-04
- 发明人: Kenichi Yoshikawa
- 申请人： TOSHIBA MEMORY CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Foley & Lardner LLP
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@327d8be4
- 主分类号： H01L21/3213
- IPC分类号： H01L21/3213 ; H01L27/11582 ; H01L27/11556 ; H01L27/11575 ; H01L27/1157 ; H01L21/311
摘要：
A method of fabricating a semiconductor device is described. A plurality of first films and a plurality of second films are alternately formed on a substrate. A hole is formed in the first and second films. A first metal layer is formed on a surface of the hole. The first metal layer is removed from a bottom surface of the hole. A second metal layer may be formed on a surface of the first metal layer after removing the first metal layer from the bottom surface of the hole. The bottom of the hole exposed from the first and second metal layers may be processed to increase a depth of the hole.
公开/授权文献
- US20190074288A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 公开/授权日：2019-03-07
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