- 专利标题： MEMS with over-voltage protection
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申请号： US15911045申请日： 2018-03-02
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公开(公告)号： US10737934B1公开(公告)日： 2020-08-11
- 发明人: Nicholas Miller , Ginel C. Hill , Charles I. Grosjean , Michael Julian Daneman , Paul M. Hagelin , Aaron Partridge
- 申请人： SiTime Corporation
- 申请人地址： US CA Sunnyvale
- 专利权人： SiTime Corporation
- 当前专利权人： SiTime Corporation
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： B81B7/04
- IPC分类号： B81B7/04 ; B81B7/02 ; H02H9/04 ; B81C1/00 ; H01L23/00
摘要：
A semiconductor device includes first and second exposed electrical contacts and a cavity having a microelectromechanical system (MEMS) structure therein. A conductive path extends from the first exposed electrical contact to the cavity and an over-voltage protection element electrically is coupled between the first and second exposed electrical contacts.
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