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公开(公告)号：US11584642B1
公开(公告)日：2023-02-21
申请号：US16861778
申请日：2020-04-29
Applicant: SiTime Corporation
Inventor： Charles I. Grosjean , Nicholas Miller , Paul M. Hagelin , Ginel C. Hill , Joseph C. Doll
Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
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公开(公告)号：US20230416081A1
公开(公告)日：2023-12-28
申请号：US18340815
申请日：2023-06-23
Applicant: SiTime Corporation
Inventor： Charles I. Grosjean , Nicholas Miller , Paul M. Hagelin , Ginel C. Hill , Joseph C. Doll
CPC classification number: B81C1/00698 , H10N30/05 , H10N39/00 , H03H3/0073 , H03H9/1057 , B81C2201/0171 , B81C1/00158
Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
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公开(公告)号：US10676349B1
公开(公告)日：2020-06-09
申请号：US15676890
申请日：2017-08-14
Applicant: SiTime Corporation
Inventor： Charles I. Grosjean , Nicholas Miller , Paul M. Hagelin , Ginel C. Hill , Joseph C. Doll
Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
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公开(公告)号：US10737934B1
公开(公告)日：2020-08-11
申请号：US15911045
申请日：2018-03-02
Applicant: SiTime Corporation
Inventor： Nicholas Miller , Ginel C. Hill , Charles I. Grosjean , Michael Julian Daneman , Paul M. Hagelin , Aaron Partridge
Abstract: A semiconductor device includes first and second exposed electrical contacts and a cavity having a microelectromechanical system (MEMS) structure therein. A conductive path extends from the first exposed electrical contact to the cavity and an over-voltage protection element electrically is coupled between the first and second exposed electrical contacts.
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公开(公告)号：US09705470B1
公开(公告)日：2017-07-11
申请号：US14617753
申请日：2015-02-09
Applicant: SiTime Corporation
Inventor： Joseph C. Doll , Paul M. Hagelin , Ginel C. Hill , Nicholas Miller , Charles I. Grosjean
IPC: H01L41/16 , H01L41/18 , H01L41/047 , H03H9/02 , H01L41/314 , H01L41/29 , H01L41/253 , H03H9/15
CPC classification number: H03H9/02448 , H03H9/02362 , H03H9/2452 , H03H2003/027 , H03H2009/02307 , H03H2009/155
Abstract: Degenerately doped semiconductor materials are deployed within resonant structures to control the first and higher order temperature coefficients of frequency, thereby enabling temperature dependence to be engineered without need for cumulative material layers which tend to drive up cost and compromise resonator performance.
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Patent Agency Ranking
公开(公告)号：US20170093361A1
公开(公告)日：2017-03-30
申请号：US15186510
申请日：2016-06-19
Applicant: SiTime Corporation
Inventor： Charles I. Grosjean , Nicholas Miller , Paul M. Hagelin , Ginel C. Hill , Joseph C. Doll , Trushal Chokshi , Yi Zhang , Aaron Partridge , Markus Lutz
CPC classification number: H03H3/0077 , H03H9/02259 , H03H9/02401 , H03H9/02448 , H03H9/1057 , H03H9/17 , H03H9/2463 , H03H2003/027 , H03H2009/02307 , H03H2009/155
Abstract: In a MEMS device having a substrate and a moveable micromachined member, a mechanical structure secures the moveable micromachined member to the substrate, thermally isolates the moveable micromachined member from the substrate and provides a conduction path to enable heating of the moveable micromachined member to a temperature of at least 300 degrees Celsius.
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公开(公告)号：US20250007492A1
公开(公告)日：2025-01-02
申请号：US18412732
申请日：2024-01-15
Applicant: SiTime Corporation
Inventor： Joseph C. Doll , Nicholas Miller , Charles I. Grosjean , Paul M. Hagelin , Ginel C. Hill
Abstract: A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.
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公开(公告)号：US11975965B2
公开(公告)日：2024-05-07
申请号：US18340815
申请日：2023-06-23
Applicant: SiTime Corporation
Inventor： Charles I. Grosjean , Nicholas Miller , Paul M. Hagelin , Ginel C. Hill , Joseph C. Doll
CPC classification number: B81C1/00698 , H03H3/0073 , H03H9/1057 , H10N30/05 , H10N39/00 , B81C1/00158 , B81C2201/0171
Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
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公开(公告)号：US11724934B2
公开(公告)日：2023-08-15
申请号：US18072506
申请日：2022-11-30
Applicant: SiTime Corporation
Inventor： Charles I. Grosjean , Nicholas Miller , Paul M. Hagelin , Ginel C. Hill , Joseph C. Doll
CPC classification number: B81C1/00698 , H03H3/0073 , H03H9/1057 , H10N30/05 , H10N39/00 , B81C1/00158 , B81C2201/0171
Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
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公开(公告)号：US20230183060A1
公开(公告)日：2023-06-15
申请号：US18072506
申请日：2022-11-30
Applicant: SiTime Corporation
Inventor： Charles I. Grosjean , Nicholas Miller , Paul M. Hagelin , Ginel C. Hill , Joseph C. Doll
CPC classification number: B81C1/00698 , H03H3/0073 , H03H9/1057 , H10N30/05 , H10N39/00 , B81C1/00158 , B81C2201/0171
Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
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