Invention Grant
- Patent Title: Nitrogen-containing ligands and their use in atomic layer deposition methods
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Application No.: US16400269Application Date: 2019-05-01
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Publication No.: US10738008B2Publication Date: 2020-08-11
- Inventor: Jeffrey W. Anthis , David Thompson
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C07F1/08
- IPC: C07F1/08 ; C07D213/38 ; C07F7/00 ; C07D207/335 ; C07D213/36 ; C23C16/455 ; C23C16/18 ; C07F1/00 ; C07F5/02 ; C07F5/06 ; C07F7/28 ; C07F9/00 ; C07F11/00 ; C07F13/00 ; C07F15/00 ; C07C211/13 ; C07C211/54 ; C23C16/50
Abstract:
Methods for deposition of elemental metal films on surfaces using metal coordination complexes comprising nitrogen-containing ligands are provided. Also provided are nitrogen-containing ligands useful in the methods of the invention and metal coordination complexes comprising these ligands.
Public/Granted literature
- US20190256467A1 Nitrogen-Containing Ligands And Their Use In Atomic Layer Deposition Methods Public/Granted day:2019-08-22
Information query
