Invention Grant
- Patent Title: Memory device sampling data using control signal transmitted through TSV
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Application No.: US16197877Application Date: 2018-11-21
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Publication No.: US10740033B2Publication Date: 2020-08-11
- Inventor: So-young Kim , Reum Oh , Haesuk Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@63238709
- Main IPC: G06F3/06
- IPC: G06F3/06 ; H01L25/18 ; G11C11/4093 ; G11C11/4076 ; H01L23/48 ; H01L25/065 ; G11C11/408

Abstract:
A memory die of a memory device includes a first first-in first-out (FIFO) circuit that samples data output from a memory cell array and outputs the data to a buffer die through a first through silicon via, based on a control signal transmitted from the buffer die. A buffer die of the memory device includes a second FIFO circuit that samples the data output from the first FIFO unit based on the control signal transmitted from the memory die through a second through silicon via, a calibration circuit that generates a delay code, based on a latency of a path from the buffer die to the first FIFO circuit and from the first FIFO circuit to the second FIFO circuit, and a delay control circuit that generates the control signal transmitted to the memory die through a third through silicon via, based on the read command and the delay code.
Public/Granted literature
- US20190303042A1 MEMORY DEVICE SAMPLING DATA USING CONTROL SIGNAL TRANSMITTED THROUGH TSV Public/Granted day:2019-10-03
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