Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US16782083Application Date: 2020-02-05
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Publication No.: US10741455B2Publication Date: 2020-08-11
- Inventor: Fu-Jung Chuang , Ching-Ling Lin , Po-Jen Chuang , Yu-Ren Wang , Wen-An Liang , Chia-Ming Kuo , Guan-Wei Huang , Yuan-Yu Chung , I-Ming Tseng
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@674c773e
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8238 ; H01L21/762 ; H01L27/092
Abstract:
A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the fin-shaped structure into a first portion and a second portion, and a gate structure on the SDB structure. Preferably, the SDB structure includes silicon oxycarbonitride (SiOCN), a concentration portion of oxygen in SiOCN is between 30% to 60%, and the gate structure includes a metal gate.
Public/Granted literature
- US20200176331A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2020-06-04
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