Invention Grant
- Patent Title: 3-dimensional NOR memory array with very fine pitch: device and method
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Application No.: US16809389Application Date: 2020-03-04
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Publication No.: US10741584B2Publication Date: 2020-08-11
- Inventor: Eli Harari , Wu-Yi Henry Chien , Scott Brad Herner
- Applicant: SUNRISE MEMORY CORPORATION
- Applicant Address: US CA Fremont
- Assignee: SUNRISE MEMORY CORPORATION
- Current Assignee: SUNRISE MEMORY CORPORATION
- Current Assignee Address: US CA Fremont
- Agency: VLP Law Group, LLP
- Agent Edward C. Kwok
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/1157 ; H01L21/768 ; H01L21/28

Abstract:
A method to ease the fabrication of high aspect ratio three dimensional memory structures for memory cells with feature sizes of 20 nm or less, or with a high number of memory layers. The present invention also provides an improved isolation between adjacent memory cells along the same or opposite sides of an active strip. The improved isolation is provided by introducing a strong dielectric barrier film between adjacent memory cells along the same side of an active strip, and by staggering memory cells of opposite sides of the active strip.
Information query
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