- 专利标题： Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method the same
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申请号： US15450220申请日： 2017-03-06
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公开(公告)号： US10741587B2公开(公告)日： 2020-08-11
- 发明人: Katsuaki Tochibayashi , Ryota Hodo
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Fish & Richardson P.C.
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@21a2a92f
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L29/423 ; H01L29/786 ; H01L23/522 ; H01L23/528 ; H01L23/544 ; H01L27/32 ; H01L29/66
摘要：
A semiconductor device including a transistor having high reliability is provided. The semiconductor device includes a transistor. The transistor includes first and second gate electrodes, a source electrode, a drain electrode, first to third oxides, first and second barrier films, and first and second gate insulators. The first barrier film is located over the source electrode, the second barrier film is located over the drain electrode, and the first and second barrier films each have a function of blocking oxygen and impurities such as hydrogen.
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