公开(公告)号：US12218246B2

公开(公告)日：2025-02-04

申请号：US17414490

申请日：2019-11-19

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Shinya Sasagawa ,  Katsuaki Tochibayashi ,  Tsutomu Murakawa ,  Erika Takahashi

IPC: H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H10B12/00

Abstract: A semiconductor device in which a variation of transistor characteristics is small is provided. The semiconductor device includes a transistor. The transistor includes a first insulator, a first oxide over the first insulator, a first conductor, a second conductor, and a second oxide, which is positioned between the first conductor and the second conductor, over the first oxide, a second insulator over the second oxide, and a third conductor over the second insulator. A top surface of the first oxide in a region overlapping with the third conductor is at a lower position than a position of a top surface of the first oxide in a region overlapping with the first conductor. The first oxide in the region overlapping with the third conductor has a curved surface between a side surface and the top surface of the first oxide, and the curvature radius of the curved surface is greater than or equal to 1 nm and less than or equal to 15 nm.

公开(公告)号：US11869979B2

公开(公告)日：2024-01-09

申请号：US17727038

申请日：2022-04-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Katsuaki Tochibayashi ,  Ryota Hodo ,  Kentaro Sugaya ,  Naoto Yamade

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H10B12/00

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/66742 ,  H10B12/05 ,  H10B12/31

Abstract: A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.

公开(公告)号：US11527657B2

公开(公告)日：2022-12-13

申请号：US16965052

申请日：2019-02-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yuki Hata ,  Katsuaki Tochibayashi ,  Junpei Sugao ,  Shunpei Yamazaki

IPC: H01L29/78 ,  H01L29/786 ,  H01L21/3115 ,  H01L27/108

Abstract: A semiconductor device with a high on-state current is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, a first insulator over the third oxide, a conductor over the first insulator, a second insulator in contact with the second oxide and the third oxide, and a third insulator over the second insulator; the second oxide includes first region to fifth regions; the resistance of the first region and the resistance of the second region are lower than the resistance of the third region; the resistance of the fourth region and the resistance of the fifth region are lower than the resistance of the third region and higher than the resistance of the first region and the resistance of the second region; and the conductor is provided over the third region, the fourth region, and the fifth region to overlap with the third region, the fourth region, and the fifth region.

公开(公告)号：US11289475B2

公开(公告)日：2022-03-29

申请号：US16695385

申请日：2019-11-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tatsuya Onuki ,  Katsuaki Tochibayashi

IPC: H01L29/786 ,  H01L27/06 ,  H01L29/45

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor and a second insulator over a first insulator; a third insulator over the first conductor and the second insulator; a fourth insulator over the third insulator; a first oxide over the fourth insulator; a second oxide and a third oxide over the first oxide; a second conductor in contact with a top surface of the third insulator, a side surface of the fourth insulator, a side surface of the first oxide, a side surface of the second oxide, and a top surface of the second oxide; a third conductor in contact with the top surface of the third insulator, a side surface of the fourth insulator, a side surface of the first oxide, a side surface of the third oxide, and a top surface of the third oxide; a fourth oxide over the first oxide; a fifth insulator over the fourth oxide; and a fourth conductor over the fifth insulator. The capacitor includes a fifth conductor over the first insulator, the third insulator over the fifth conductor, and the second conductor over the third insulator.

公开(公告)号：US10797180B2

公开(公告)日：2020-10-06

申请号：US16703175

申请日：2019-12-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daigo Ito ,  Takahisa Ishiyama ,  Katsuaki Tochibayashi ,  Kazuya Hanaoka

IPC: H01L29/786 ,  H01L21/67 ,  H01L27/146 ,  H01L29/04 ,  H01L29/423 ,  H01L29/66 ,  H01L27/12

Abstract: The semiconductor device includes a first insulating layer; a first oxide insulating layer over the first insulating layer; an oxide semiconductor layer over the first oxide insulating layer; a source electrode layer and a drain electrode layer over the oxide semiconductor layer; a second oxide insulating layer over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a gate insulating layer over the second oxide insulating layer; a gate electrode layer over the gate insulating layer; a second insulating layer over the first insulating layer the source electrode layer, the drain electrode layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer, and a third insulating layer over the first insulating layer, the source electrode layer, the drain electrode layer, and the second insulating layer.

公开(公告)号：US10243081B2

公开(公告)日：2019-03-26

申请号：US15075775

申请日：2016-03-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Terumasa Ikeyama ,  Katsuaki Tochibayashi

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/49 ,  H01L21/385 ,  H01L29/04

Abstract: A highly reliable semiconductor device including a transistor using an oxide semiconductor is provided. In a semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a first insulating layer is formed in contact with the oxide semiconductor layer, and an oxygen doping treatment is performed thereon, whereby the first insulating layer is made to contain oxygen in excess of the stoichiometric composition. The formation of the second insulating layer over the first insulating layer enables excess oxygen included in the first insulating layer to be supplied efficiently to the oxide semiconductor layer. Accordingly, the highly reliable semiconductor device with stable electric characteristics can be provided.

公开(公告)号：US09935203B2

公开(公告)日：2018-04-03

申请号：US15696231

申请日：2017-09-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinya Sasagawa ,  Takashi Hamada ,  Akihisa Shimomura ,  Satoru Okamoto ,  Katsuaki Tochibayashi

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/465 ,  H01L21/4757 ,  H01L29/423 ,  H01L21/4763

CPC classification number: H01L29/7869 ,  H01L21/465 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/42372 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78648

Abstract: A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a high on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device having a high degree of integration is provided. A semiconductor device including an oxide semiconductor; a second insulator; a second conductor; a third conductor; a fourth conductor; a fifth conductor; a first conductor and a first insulator embedded in an opening portion formed in the second insulator, the second conductor, the third conductor, the fourth conductor, and the fifth conductor; a region where a side surface and a bottom surface of the second conductor are in contact with the fourth conductor; and a region where a side surface and a bottom surface of the third conductor are in contact with the fifth conductor.

公开(公告)号：US12057480B2

公开(公告)日：2024-08-06

申请号：US18090634

申请日：2022-12-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Shinya Sasagawa ,  Erika Takahashi ,  Katsuaki Tochibayashi ,  Ryo Arasawa

IPC: H01L27/12 ,  H01L29/24 ,  H10B12/00

CPC classification number: H01L29/24 ,  H01L27/1225 ,  H01L27/1251 ,  H10B12/30

Abstract: A semiconductor device in which variations in characteristics, deterioration of elements, and abnormality in shape are inhibited is provided. The semiconductor device includes a first region including a plurality of elements and a second region including a plurality of dummy elements. The second region is provided in an outer edge of the first region, and the element and the dummy element each include an oxide semiconductor. The element and the dummy element have the same structure, and a structure body included in the element and a structure body included in the dummy element are formed with the same material and provided in the same layer. The oxide semiconductor includes In, an element M (M is Al, Ga, Y, or Sn), and Zn.

公开(公告)号：US11257959B2

公开(公告)日：2022-02-22

申请号：US16766425

申请日：2018-11-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Tsutomu Murakawa ,  Hiroki Komagata ,  Katsuaki Tochibayashi ,  Kentaro Sugaya

IPC: H01L29/786

Abstract: A semiconductor device having a high on-state current is provided.
The semiconductor device includes a first oxide; a first conductor and a second conductor provided over the first oxide to be separated from each other; and a second oxide provided over the first oxide and between the first conductor and the second conductor. Each of the first oxide and the second oxide has crystallinity, the first oxide includes a region where a c-axis is aligned substantially perpendicularly to a top surface of the first oxide, and the second oxide includes a region where the c-axis is aligned substantially perpendicularly to the top surface of the first oxide, a region where the c-axis is aligned substantially perpendicularly to a side surface of the first conductor, and a region where the c-axis is aligned substantially perpendicularly to a side surface of the second conductor.

公开(公告)号：US10741587B2

公开(公告)日：2020-08-11

申请号：US15450220

申请日：2017-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Katsuaki Tochibayashi ,  Ryota Hodo

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L23/522 ,  H01L23/528 ,  H01L23/544 ,  H01L27/32 ,  H01L29/66

Abstract: A semiconductor device including a transistor having high reliability is provided. The semiconductor device includes a transistor. The transistor includes first and second gate electrodes, a source electrode, a drain electrode, first to third oxides, first and second barrier films, and first and second gate insulators. The first barrier film is located over the source electrode, the second barrier film is located over the drain electrode, and the first and second barrier films each have a function of blocking oxygen and impurities such as hydrogen.