Invention Grant
- Patent Title: Preparation method and application of light-responsive LED based on GaN/CsPbBrxI3-x heterojunction
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Application No.: US16616162Application Date: 2019-02-19
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Publication No.: US10749065B2Publication Date: 2020-08-18
- Inventor: Hao Wang , Hai Zhou , Guokun Ma , Zehao Song
- Applicant: HUBEI UNIVERSITY
- Applicant Address: CN Wuhan, Hubei
- Assignee: HUBEI UNIVERSITY
- Current Assignee: HUBEI UNIVERSITY
- Current Assignee Address: CN Wuhan, Hubei
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1a61da22
- International Application: PCT/CN2019/075448 WO 20190219
- International Announcement: WO2019/165909 WO 20190906
- Main IPC: H01L31/12
- IPC: H01L31/12 ; H01L33/00 ; H01L33/40 ; H01L31/0336 ; C09K11/08 ; C01G21/00 ; H01L33/26 ; H01L21/66 ; H01L31/18 ; C09K11/66
Abstract:
A light-responsive LED (Light Emitting Diode) based on a GaN/CsPbBrxI3-x heterojunction, a preparation method and an application thereof are provided. The light-responsive LED consists of a GaN base layer on a sapphire substrate, an all-inorganic perovskite CsPbBrxI3-x film, an indium electrode and a carbon electrode, forming an In/GaN/CsPbBrxI3-x/C structure, wherein: in the CsPbBrxI3-x film, 0
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