公开(公告)号：US20200144438A1

公开(公告)日：2020-05-07

申请号：US16616162

申请日：2019-02-19

Applicant: HUBEI UNIVERSITY

Inventor： Hao Wang ,  Hai Zhou ,  Guokun Ma ,  Zehao Song

IPC: H01L31/12 ,  H01L33/00 ,  H01L33/26 ,  H01L33/40 ,  H01L21/66 ,  H01L31/18 ,  H01L31/0336 ,  C09K11/66 ,  C09K11/08 ,  C01G21/00

Abstract: A light-responsive LED (Light Emitting Diode) based on a GaN/CsPbBrxI3-x heterojunction, a preparation method and an application thereof are provided. The light-responsive LED consists of a GaN base layer on a sapphire substrate, an all-inorganic perovskite CsPbBrxI3-x film, an indium electrode and a carbon electrode, forming an In/GaN/CsPbBrxI3-x/C structure, wherein: in the CsPbBrxI3-x film, 0

公开(公告)号：US10749065B2

公开(公告)日：2020-08-18

申请号：US16616162

申请日：2019-02-19

Applicant: HUBEI UNIVERSITY

Inventor： Hao Wang ,  Hai Zhou ,  Guokun Ma ,  Zehao Song

IPC: H01L31/12 ,  H01L33/00 ,  H01L33/40 ,  H01L31/0336 ,  C09K11/08 ,  C01G21/00 ,  H01L33/26 ,  H01L21/66 ,  H01L31/18 ,  C09K11/66

Abstract: A light-responsive LED (Light Emitting Diode) based on a GaN/CsPbBrxI3-x heterojunction, a preparation method and an application thereof are provided. The light-responsive LED consists of a GaN base layer on a sapphire substrate, an all-inorganic perovskite CsPbBrxI3-x film, an indium electrode and a carbon electrode, forming an In/GaN/CsPbBrxI3-x/C structure, wherein: in the CsPbBrxI3-x film, 0