Invention Grant
- Patent Title: Method of forming a thin film
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Application No.: US16439369Application Date: 2019-06-12
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Publication No.: US10752645B2Publication Date: 2020-08-25
- Inventor: Gyu-hee Park , Youn-soo Kim , Jae-soon Lim , Youn-joung Cho , Haruyoshi Sato , Naoki Yamada , Hiroyuki Uchiuzou
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do JP Tokyo
- Assignee: Samsung Electronics Co., Ltd.,Adeka Corporation
- Current Assignee: Samsung Electronics Co., Ltd.,Adeka Corporation
- Current Assignee Address: KR Suwon-si, Gyeonggi-do JP Tokyo
- Agency: Lee IP Law, PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7bb4bcf
- Main IPC: C07F7/10
- IPC: C07F7/10 ; C23C16/40 ; C23C16/455
Abstract:
A silicon-containing intermediate is synthesized by reacting a lanthanum tris[bis(trialkylsilyl)amide] complex with an alkylcyclopentadiene. A lanthanum compound is synthesized by reacting the silicon-containing intermediate with a dialkylamidine-based compound.
Public/Granted literature
- US20190292207A1 METHOD OF FORMING A THIN FILM Public/Granted day:2019-09-26
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