- 专利标题: Contact structure and method of forming
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申请号: US16360729申请日: 2019-03-21
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公开(公告)号: US10756017B2公开(公告)日: 2020-08-25
- 发明人: Yu-Hung Lin , Mei-Hui Fu , Sheng-Hsuan Lin
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L23/532
- IPC分类号: H01L23/532 ; H01L21/768 ; H01L21/285 ; H01L23/485 ; H01L21/762
摘要:
Contact structures and methods of forming contacts structures are contemplated by this disclosure. A structure includes a dielectric layer over a substrate, an adhesion layer, a silicide, a barrier layer, and a conductive material. The dielectric layer has an opening to a surface of the substrate. The adhesion layer is along sidewalls of the opening. The silicide is on the surface of the substrate. The barrier layer is on the adhesion layer and the silicide, and the barrier layer directly adjoins the silicide. The conductive material is on the barrier layer in the opening.
公开/授权文献
- US20190221522A1 Contact Structure and Method of Forming 公开/授权日:2019-07-18
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