公开(公告)号：US20190221522A1

公开(公告)日：2019-07-18

申请号：US16360729

申请日：2019-03-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Lin ,  Mei-Hui Fu ,  Sheng-Hsuan Lin

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L21/285 ,  H01L23/485

摘要： Contact structures and methods of forming contacts structures are contemplated by this disclosure. A structure includes a dielectric layer over a substrate, an adhesion layer, a silicide, a barrier layer, and a conductive material. The dielectric layer has an opening to a surface of the substrate. The adhesion layer is along sidewalls of the opening. The silicide is on the surface of the substrate. The barrier layer is on the adhesion layer and the silicide, and the barrier layer directly adjoins the silicide. The conductive material is on the barrier layer in the opening.

公开(公告)号：US10269713B2

公开(公告)日：2019-04-23

申请号：US15802729

申请日：2017-11-03

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Lin ,  Mei-Hui Fu ,  Sheng-Hsuan Lin

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L21/285 ,  H01L23/485 ,  H01L21/762

摘要： Contact structures and methods of forming contacts structures are contemplated by this disclosure. A structure includes a dielectric layer over a substrate, an adhesion layer, a silicide, a barrier layer, and a conductive material. The dielectric layer has an opening to a surface of the substrate. The adhesion layer is along sidewalls of the opening. The silicide is on the surface of the substrate. The barrier layer is on the adhesion layer and the silicide, and the barrier layer directly adjoins the silicide. The conductive material is on the barrier layer in the opening.

公开(公告)号：US10756017B2

公开(公告)日：2020-08-25

申请号：US16360729

申请日：2019-03-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Lin ,  Mei-Hui Fu ,  Sheng-Hsuan Lin

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L21/285 ,  H01L23/485 ,  H01L21/762

摘要： Contact structures and methods of forming contacts structures are contemplated by this disclosure. A structure includes a dielectric layer over a substrate, an adhesion layer, a silicide, a barrier layer, and a conductive material. The dielectric layer has an opening to a surface of the substrate. The adhesion layer is along sidewalls of the opening. The silicide is on the surface of the substrate. The barrier layer is on the adhesion layer and the silicide, and the barrier layer directly adjoins the silicide. The conductive material is on the barrier layer in the opening.

公开(公告)号：US20200051858A1

公开(公告)日：2020-02-13

申请号：US16654845

申请日：2019-10-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Pin-Wen Chen ,  Chia-Han Lai ,  Chih-Wei Chang ,  Mei-Hui Fu ,  Ming-Hsing Tsai ,  Wei-Jung Lin ,  Yu Shih Shih Wang ,  Ya-Yi Cheng ,  I-Li Chen

IPC分类号： H01L21/768 ,  H01L23/535 ,  H01L21/3213 ,  H01L21/285

摘要： The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.

公开(公告)号：US09589892B2

公开(公告)日：2017-03-07

申请号：US15160414

申请日：2016-05-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Lin ,  Mei-Hui Fu ,  Wei-Jung Lin ,  You-Hua Chou ,  Chia-Lin Hsu ,  Hon-Lin Huang ,  Shih-Chi Lin

IPC分类号： H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L21/3205 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L23/528 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877 ,  H01L21/76886 ,  H01L21/76889 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate, a dielectric layer over the contact layer, a silicide layer over the exposed portion of the contact layer, a barrier layer along sidewalls of the opening, an alloy layer over the barrier layer, a glue layer over the alloy layer, and a conductive plug over the glue layer, wherein the dielectric layer has an opening, and the opening exposes a portion of the contact layer.

摘要翻译： 公开了互连结构和形成互连结构的方法。 互连结构包括在衬底上的接触层，接触层上的电介质层，接触层的暴露部分上的硅化物层，沿着开口侧壁的阻挡层，阻挡层上的合金层，胶 层，并且在胶层上方具有导电塞，其中介电层具有开口，并且开口暴露接触层的一部分。

公开(公告)号：US09385080B2

公开(公告)日：2016-07-05

申请号：US14461285

申请日：2014-08-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Lin ,  Mei-Hui Fu ,  Wei-Jung Lin ,  You-Hua Chou ,  Chia-Lin Hsu ,  Hon-Lin Huang ,  Shih-Chi Lin

IPC分类号： H01L23/528 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L23/528 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877 ,  H01L21/76886 ,  H01L21/76889 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate; a dielectric layer over the contact layer, wherein the dielectric layer has an opening, the opening exposing a portion of the contact layer; a silicide layer over the exposed portion of the contact layer; a barrier layer along sidewalls of the opening; an alloy layer over the barrier layer; a glue layer over the alloy layer; and a conductive plug over the glue layer.

摘要翻译： 公开了互连结构和形成互连结构的方法。 互连结构包括在衬底上的接触层; 在所述接触层上的电介质层，其中所述电介质层具有开口，所述开口暴露所述接触层的一部分; 在接触层的暴露部分上方的硅化物层; 沿着所述开口的侧壁的阻挡层; 阻挡层上的合金层; 合金层上的胶层; 和胶层上的导电塞。

公开(公告)号：US20160049362A1

公开(公告)日：2016-02-18

申请号：US14461285

申请日：2014-08-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Lin ,  Mei-Hui Fu ,  Wei-Jung Lin ,  You-Hua Chou ,  Chia-Lin Hsu ,  Hon-Lin Huang ,  Shih-Chi Lin

IPC分类号： H01L23/528 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L23/528 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877 ,  H01L21/76886 ,  H01L21/76889 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate; a dielectric layer over the contact layer, wherein the dielectric layer has an opening, the opening exposing a portion of the contact layer; a silicide layer over the exposed portion of the contact layer; a barrier layer along sidewalls of the opening; an alloy layer over the barrier layer; a glue layer over the alloy layer; and a conductive plug over the glue layer.

摘要翻译： 公开了互连结构和形成互连结构的方法。 互连结构包括在衬底上的接触层; 在所述接触层上的电介质层，其中所述电介质层具有开口，所述开口暴露所述接触层的一部分; 在接触层的暴露部分上方的硅化物层; 沿着所述开口的侧壁的阻挡层; 阻挡层上的合金层; 合金层上的胶层; 和胶层上的导电塞。

公开(公告)号：US09831183B2

公开(公告)日：2017-11-28

申请号：US14532886

申请日：2014-11-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Lin ,  Mei-Hui Fu ,  Sheng-Hsuan Lin

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L21/285 ,  H01L23/485 ,  H01L21/762

CPC分类号： H01L23/53266 ,  H01L21/28518 ,  H01L21/76224 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： Contact structures and methods of forming contacts structures are contemplated by this disclosure. A structure includes a dielectric layer over a substrate, an adhesion layer, a silicide, a barrier layer, and a conductive material. The dielectric layer has an opening to a surface of the substrate. The adhesion layer is along sidewalls of the opening. The silicide is on the surface of the substrate. The barrier layer is on the adhesion layer and the silicide, and the barrier layer directly adjoins the silicide. The conductive material is on the barrier layer in the opening.

公开(公告)号：US20160268192A1

公开(公告)日：2016-09-15

申请号：US15160414

申请日：2016-05-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Hung Lin ,  Mei-Hui Fu ,  Wei-Jung Lin ,  You-Hua Chou ,  Chia-Lin Hsu ,  Hon-Lin Huang ,  Shih-Chi Lin

IPC分类号： H01L23/528 ,  H01L23/532 ,  H01L21/285 ,  H01L23/522 ,  H01L21/768 ,  H01L21/3205

CPC分类号： H01L23/528 ,  H01L21/28518 ,  H01L21/32053 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877 ,  H01L21/76886 ,  H01L21/76889 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate, a dielectric layer over the contact layer, a silicide layer over the exposed portion of the contact layer, a barrier layer along sidewalls of the opening, an alloy layer over the barrier layer, a glue layer over the alloy layer, and a conductive plug over the glue layer, wherein the dielectric layer has an opening, and the opening exposes a portion of the contact layer.

摘要翻译： 公开了互连结构和形成互连结构的方法。 互连结构包括在衬底上的接触层，接触层上的电介质层，接触层的暴露部分上的硅化物层，沿着开口侧壁的阻挡层，阻挡层上的合金层，胶 层，并且在胶层上方具有导电塞，其中介电层具有开口，并且开口暴露接触层的一部分。

公开(公告)号：US10943823B2

公开(公告)日：2021-03-09

申请号：US16654845

申请日：2019-10-16

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Pin-Wen Chen ,  Chia-Han Lai ,  Chih-Wei Chang ,  Mei-Hui Fu ,  Ming-Hsing Tsai ,  Wei-Jung Lin ,  Yu Shih Shih Wang ,  Ya-Yi Cheng ,  I-Li Chen

IPC分类号： H01L21/768 ,  H01L23/535 ,  H01L21/3213 ,  H01L21/285

摘要： The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In some embodiments, a structure includes a first dielectric layer over a substrate, a first conductive feature through the first dielectric layer, the first conductive feature comprising a first metal, a second dielectric layer over the first dielectric layer, and a second conductive feature through the second dielectric layer having a lower convex surface extending into the first conductive feature, wherein the lower convex surface of the second conductive feature has a tip end extending laterally under a bottom boundary of the second dielectric layer.