An electrically erasable programmable nonvolatile memory cell includes a semiconductor substrate having a first substrate region and a second substrate region apart from the first substrate region in a lateral direction, a channel region between the first substrate region and the second substrate region, an electrically conductive control gate insulated from and disposed over a first channel portion of the channel region, an electrically conductive floating gate insulated from and disposed over a second channel portion of the channel region, an electrically conductive source line electrically connected to the second substrate region, and an electrically conductive erase gate insulated from and disposed over a tip of the floating gate.