Invention Grant
- Patent Title: Semiconductor device including partially enlarged channel hole
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Application No.: US16203790Application Date: 2018-11-29
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Publication No.: US10756107B2Publication Date: 2020-08-25
- Inventor: Eunyeoung Choi , Hyung Joon Kim , Bio Kim , Yujin Kim , Junggeun Jee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@72a330ac
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L23/532 ; H01L27/1157

Abstract:
A semiconductor device includes a lower stack structure on a substrate, an upper stack structure on the lower stack structure, and a channel structure in a channel hole formed through the upper stack structure and the lower stack structure. The channel hole includes a lower channel hole in the lower stack structure, an upper channel hole in the upper stack structure, and a partial extension portion adjacent to an interface between the lower stack structure and the upper stack structure. The partial extension portion is in fluid communication with the lower channel hole and the upper channel hole. A lateral width of the partial extension portion may be greater than a lateral width of the upper channel hole adjacent to the partial extension portion and greater than a lateral width of the upper channel hole adjacent to the partial extension portion.
Public/Granted literature
- US20200020713A1 SEMICONDUCTOR DEVICE INCLUDING PARTIALLY ENLARGED CHANNEL HOLE Public/Granted day:2020-01-16
Information query
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